Effect of Sb impurity on the photoelectrical properties of a-Se

Investigation of the Meyer–Neldel compensation rule in binary selenium-based amorphous semiconductors

“…The values of E MN supported the fact that the MN compensation effect results from carrier-induced softening of vibrations via adiabatic hopping approach. The theoretical values of phonon energy coincide with the experimental ones, referred to as multi-excitations entropy as a Se-Cu, TF [23] Se-Sb, TF [24] Se-As, g [10] Se-As, g [25] Se-Sb, TF [26] Se-Sb, TF [27] Se-Sb, TF [28] Se-In, g [29] Se-In, TF [30] Se-In, TF [31] Se-Ga, TF [32] GA transport conduction mechanism. This is obtained via a satisfaction correlation among the obtained values of σ 00 and E MN .…”

“…This may occur due to the selective approach to the criteria of the glass-forming tendency of the selected compositions. The change in compositions and/or preparation conditions for a certain system leads, generally, to a pronounced effect on the two MN parameters: Se-Cu, TF [24] Se-Sb, TF [25] Se-As, g [10] Se-As, g [26] Se-Sb, TF [27] Se-Sb, TF [28] Se-Bi, TF [29] Se-In, g [30] Se-In, TF [31] Se-In, TF [32] Se-Ga, TF [33] ΔE Table 1 The MN parameters (E MN and σ 00 ) and statistical shifts γ F */k as a function of both atomic number (Z) and binary-system. Upon analyzing Table 1, one emerges three common concluding remarks among GA and/or GB.…”

Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

“…In fact the experimental result of a decreasing R RESET at fixed readout temperature due to increasing Sb concentration, already observed in Refs. [15][16][17] may be directly linked to the modulation of the energy gap as a function of the particular material composition, as already optically measured on thin-film chalcogenide-based alloys [18] as well as electrically measured on amorphous photoconductive materials [19] with the modulation of the Sb concentration and following the same trend. Fig.…”

Improved thermal stability of antimony‐doped amorphous selenium film for X‐ray flat‐panel detectors

“…A tremendous amount of research has been focused on its photoelectrical properties and thermal properties [21][22][23]. Kushwaha et al [24] reported that both the photoconductivity and photosensitivity of Se-Sb glass have a discontinuity at 2 and 8 at.% of Sb. Joraid and coworkers [25] measured the activation energy for crystallization of a-Se film, and found the Avrami exponent to be about 2 for an annealing temperature T 361 K. High-field effects and crystallization kinetics have been reported by Kumar and coworkers [26][27][28].…”

“…As a group III element, Sb has a high Z and acts in principle as a crosslinking agent between Se chains. [20][21][22][23][24][25].…”