Effect of Same‐Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light‐Emitting Diode on Silicon Substrate

Chang, Zheng; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

doi:10.1155/2013/538297

Cited by 4 publications

(5 citation statements)

References 17 publications

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“…Ju et al addressed that the quantum well protective layer influence directly the indium composition and optical properties of the MQWs [8]. In addition, our previous work also demonstrated that the growth temperature of GaN cap layer was the same as that of the InGaN QW, preventing effectively the InGaN decomposition and obtaining better QW/quantum barrier (QB) interface [9]. However, most previous related works were based on the effect of cap layer on the optical properties and/or material properties of LEDs, whereas studies on device performances are relatively sparse.…”

Section: Introductionmentioning

confidence: 97%

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Liao

Wang

et al. 2020

Semicond. Sci. Technol.

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The low-temperature GaN cap layer was designed after quantum wells for the V-pits contained InGaN-based green light-emitting diodes (LEDs). It is found that the LEDs' performances are greatly improved with a thicker cap layer. The indium distribution in InGaN/GaN multiple quantum wells (MQWs) becomes more homogeneous. The quality of interface between the quantum well and quantum barrier is promoted, and the carrier confinement effect is enhanced. Thereby the external quantum efficiency (EQE) increases at high current density. However, the sample with a relative thicker cap layer exhibits the lower EQE at low current density, which is attributed to there being more defects at the upper interface of QWs, and the increased probability of carriers meeting at these non-radiative recombination centers. Meanwhile, only the major emission peak emitted from c-plane MQWs can be observed in the electroluminescence spectrum of 100 K, and other emission peaks are hardly visible, which indicates that the sample with the thicker cap has better carrier transport performance.

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Section: Introductionmentioning

confidence: 97%

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Liao

Wang

et al. 2020

Semicond. Sci. Technol.

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“…Besides, the increase of indium content makes the phase separation of indium more serious, leading higher density of dislocations caused by lattice mismatch [3]. The growth of high indium content MQWs requires a higher growth temperature difference between the wells and the barriers, thus Indium atoms may desorb from the surface, leading to the generation of defects and indium segregation near the upper interface of the QWs [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

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“…The In incorporation, strain induced bandgap, interfaces, structural quality and annealing effect on the InGaN based structures were already briefly discussed in the literature [3, 4, 12, 13]. Changda Zheng et.al, introduced the GaN caplayer at same-temperature similar to that of the InGaN QW in order to obtain In-rich InGaN and good interfaces [14]. Keller et.al reported that by introducing InGaN/SiN layers between the GaN layers, the dislocation density was reduced [15].…”

Section: Introductionmentioning

confidence: 99%

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

et al. 2019

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InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using highresolution X-ray diffraction. The Indium composition and InGaN thickness were determined to be 10-15% and 5-10 nm respectively. Transmission electron microscopy image revealed the interfacial characteristics of InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN were determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5nm)/GaN structures.

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Effect of Same‐Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light‐Emitting Diode on Silicon Substrate

Cited by 4 publications

References 17 publications

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

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