Effect Of RTA On TiN Films As The Barrier Layer for Pt/BST/Pt Capacitors Prepared By RF Magnetron Co-sputter Technique At Low Substrate Temperature

Abstract

Effect of rapid-thermal-annealing on metallic barrier TiN against the interdiffusions of Ti and Si into BST in Pt/BST/Pt/TiN/Ti/Si capacitors has been studied. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si-plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were used between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (ε r =320), low leakage current (1.5x10 -8 A/cm 2 ) under 0.1 MV/cm, and life time longer than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O 2 mixed ambient at a low substrate temperature (300 ).