Effect of RF-sputtering temperature of ITO electrodes on the resistive switching behaviour of ITO/RbPbI₃/Cu devices

Abstract

In this work, we deposit Indium doped Tin Oxide (ITO) on a glass substrate using the Radio-Frequency Sputtering technique at different temperatures and studied its structural and optical properties. Various structural, optical, and morphological studies are conducted on the ITO substrates. In addition, we have used these ITO films as conducting electrodes in MIM (metal-insulator-metal) type structures for resistive memory application. A resistive switching memory device based on RbPbI3 with sputtered ITO films as the bottom electrode is fabricated and studied for its electrical performance. It has been found that the device showed the write-once-read-many (WORM) nature at a sputtering temperature of 300 °C with a good OFF/ON ratio. The devices with ITO film sputtered a temperature below 300 °C do not show any switching behavior due to lower conductivity and improper surface morphology.

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

“…These results suggest that D 1 with device structure Al/7HNO3C/ITO exhibits WORM-type resistive memory behavior . The memory window of the device is of the order of 10 2 at data read out voltage of 0.1 V, which is well above the acceptable value for practical applications …”

“…11 The memory window of the device is of the order of 10 2 at data read out voltage of 0.1 V, which is well above the acceptable value for practical applications. 35 Data retention characteristics of a memory device give the measure of nonvolatility of the ON and OFF states of the device. 36 To obtain the data retention characteristics of the proposed device, HRS and LRS resistances (R HRS and R LRS ) of the device were measured by applying read voltage pulses (at 0.1 V, 10 ms) continuously at an interval of 100 s for 8 h. The corresponding resistance values are presented in Figure 4c.…”