Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

Abstract

The Bi 1.5 Mg 0.5 Nb 0.5 Ti 1.5 O 7 (BMNT) thin films with cubic pyrochlore structure were prepared on ITO substrates by RF magnetron sputtering. The effect of rf power on the dielectric properties of BMNT thin films were investigated. As the rf power increases, the crystallinity becomes better, the dielectric properties and tunability have an obvious improvement. The BMNT thin film deposited at 250 W exhibited dielectric constant of 105, the tunability of 33, low tangent loss of 0.0035, and the largest FOM of 361.89. The relationship of leakage current and thickness was also studied and a possible explanation was proposed. The excellent dielectric properties make BMNT thin films promising for potential tunable capacitor applications.