Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique

Kim, Jun Kwan; Yun, Sun Jin; Lee, Jaemin; Lim, Jung Wook

doi:10.1016/j.cap.2010.01.008

Cited by 30 publications

(13 citation statements)

References 17 publications

(25 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By comparison, it is helpful to understand relations between the process parameters and the resulting film properties. There are several papers to report the optical and electrical properties of GZO films [26][27][28][29]. To evaluate the performance of GZO thin films, we can make a comparison between the literatures and this work on the optical and electrical properties of GZO thin films.…”

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 98%

“…When the sputtering power was increased, deteriorations in the film morphology and the crystallinity were resulted in increasing electrical resistivity and decreasing Hall mobility. Kim et al [27] reported that the effect of RF power density, working pressure and film thickness are evaluated on the electrical and material properties of the films to determine the optimal transparency and conductivity of GZO films. The average transmittance of all the samples was higher than 88% in visible range.…”

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 99%

“…Pulsed DC sputtering [26] >80% at = 550 nm 4.89 × 10 −4 1-3.5 kW RF magnetron sputtering [27] NA 3.45 × 10 −4 100-200 W RF magnetron sputtering [28] 86.7% 1.9 × 10 −4 100-200 W RF magnetron sputtering [29] 86.5% (400-800 nm) 6 …”

Section: Coating Techniquesmentioning

confidence: 99%

“…The GZO film showed the lowest resistivity of 3.45 × 10 −4 cm at optimized processing parameters of 350 • C, 6 mTorr and 200 W. But they did not report the optical properties of GZO films. For comparison, we list the literature values [26][27][28][29] for the related properties of GZO films affected by sputtering power. Table 1 shows the comparisons between the literatures and this work on the optical and electrical properties of GZO films.…”

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 99%

See 3 more Smart Citations

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Tien

Tsai

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 98%

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 99%

Section: Coating Techniquesmentioning

confidence: 99%

Section: Comparison Of the Optical And Electrical Properties Of Gzo Fmentioning

confidence: 99%

See 2 more Smart Citations

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Tien

Tsai

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

“…) Electron beam energy (keV) 10 In fabricating electronic devices, doping of ZnO thin film offers a simple method to improve its optical and electrical properties. Typically, doping by group III elements such as Al, Ga, and In in ZnO thin films decreases their resistivity by increasing the carrier concentration; these trivalent elements substitute for divalent Zn 2?…”

mentioning

confidence: 99%

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Kim

et al. 2015

J Sol-Gel Sci Technol

View full text Add to dashboard Cite

In-doped ZnO thin films were prepared by a sol-gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high Indoping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% Indoped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 9 10 -2 X cm, while 57.1 X cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beamtreated ZnO thin film. Graphical Abstract 10

show abstract

PEDOT:PSS Films with Greatly Enhanced Conductivity via Nitric Acid Treatment at Room Temperature and Their Application as Pt/TCO‐Free Counter Electrodes in Dye‐Sensitized Solar Cells

Yeon

Yun

Kim

et al. 2015

Adv Elect Materials

Self Cite

108

View full text Add to dashboard Cite

A room‐temperature HNO3 treatment method is developed that significantly enhances the conductivity of a poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) film, which is one of the most promising transparent conducting materials. The PEDOT:PSS film treated with HNO3 exhibits a conductivity as high as 4100 S cm−1, which is the highest value among reported conductivities achieved by treatments at room temperature. The mechanism of this conductivity enhancement is elucidated by means of electrical, optical, structural, and compositional characterizations of the PEDOT:PSS films. The HNO3 treatment induces phase separation and crystallization in the (100) and (200) directions of PEDOT:PSS through selective removal of the PSS domains. This rearrangement significantly increases the conductivity through an enhancement of the inter‐chain interaction between the conducting polymers. Dye‐sensitized solar cells (DSSCs) that adopt these films as counter electrodes are developed as an example of practical applications. Using the HNO3‐treated PEDOT:PSS films, a power‐conversion efficiency of 8.59% is achieved for Pt/fluorine‐doped tin oxide (FTO)‐free DSSCs. This study demonstrates that a facile HNO3 treatment at room temperature is one of the most promising methods for obtaining highly conductive and transparent PEDOT:PSS films, and it facilitates the commercial use of PEDOT:PSS in next‐generation transparent electrodes.

show abstract

Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique

Cited by 30 publications

References 17 publications

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

PEDOT:PSS Films with Greatly Enhanced Conductivity via Nitric Acid Treatment at Room Temperature and Their Application as Pt/TCO‐Free Counter Electrodes in Dye‐Sensitized Solar Cells

Contact Info

Product

Resources

About