2016
DOI: 10.12693/aphyspola.129.362
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots

Abstract: The effect of retrapping on thermoluminescence intensity peak corresponding to each trap of small amorphous silicon quantum dots in three traps -one recombination center model is investigated. For first order kinetics, where there is no effect of retrapping, the thermoluminescence intensity clearly depends on the level of the trap beneath the edge of the conduction band. This energy difference between the edge of the conduction band and the level of the trap is called trap depth (activation energy). The shallo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
2
2

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 15 publications
0
1
0
Order By: Relevance
“…The influence of spatial confinement on properties of quantum systems have been widely studied in the literature and remains subject of continuous interest in both theoretical and experimental fields [1][2][3][4][5]. One of the most interesting confined quantum systems is the two-electron Hooke's-law atom (HA) also known as hookium or harmonium [6].…”
Section: Introductionmentioning
confidence: 99%
“…The influence of spatial confinement on properties of quantum systems have been widely studied in the literature and remains subject of continuous interest in both theoretical and experimental fields [1][2][3][4][5]. One of the most interesting confined quantum systems is the two-electron Hooke's-law atom (HA) also known as hookium or harmonium [6].…”
Section: Introductionmentioning
confidence: 99%