Abstract:Cobalt doped ZnO (ZnO:Co) films with a 1 at% doping rate have been successfully
grown on (100) oriented p type Si substrates by radiofrequency magnetron
sputtering. Post annealing treatments at 973 K for various short periods have
been carried out and structural, optical and electrical properties of the films
have been investigated. Upon rapid annealing, the dopant distribution in the
film has been found homogen… Show more
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