Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

Wang, Jiangbao; Xu, Qiang; Yuan, Jian; Liu, Feng; Sun, Haibin; Wang, Xun

doi:10.1063/1.358713

Cited by 6 publications

(3 citation statements)

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“…22,23 For pure Si, an experimental value previously reported, ␤ Si ϭ5.3ϫ10 Ϫ24 cm 3 , was used in this work. 22 The bulk lattice constants of the undoped SiGe layers, a i ϭa i (x), depend on the Ge fraction following the empirical expression based on Dismukes's data 24,25 a͑x ͒ϭa Si ϩ0.1992xϩ0.02733x 2 , ͑6͒…”

Section: ͑3͒mentioning

confidence: 99%

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Rodrı́guez

Kling

et al. 1997

Journal of Applied Physics

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Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF2 + implantation A detailed characterization of undoped and heavily boron-doped Si 1Ϫx Ge x layers with xϭ0.21, 0.26, and 0.34 grown on ͑001͒ Si wafers by solid phase epitaxy is presented. The starting material for solid phase epitaxial growth was prepared by amorphization of epitaxial SiGe-Si heterostructures by ion implantation. In order to obtain doped layers, boron was also implanted into some of the amorphous samples. After regrowth, the strain depth distributions of the SiGe layers were measured using axial channeling angular scans and the defect distributions were observed by high-resolution electron microscopy. A defect-free region ranging from 0 nm ͑undoped layer of x ϭ0.34) to 30 nm ͑doped layer of xϭ0.21) in thickness was observed next to the layer-substrate interface. In the upper region of the layers, strain-relieving defects, identified as planar faults, were observed. Some isolated defects were also present at the layer-substrate interfaces of most of the samples. The measured strain depth profiles show that ͑i͒ the defect-free regions are not always fully strained; the defects located at the interfaces being responsible for this partial relaxation; ͑ii͒ the strain is almost constant throughout the defect-free layers because it cannot be relieved due to the absence of defects; and ͑iii͒ the strain progressively decreases towards the sample surfaces in the region of the layer where the strain-relieving defects are located. Comparison between the undoped and boron-doped layers show the consequences of the strain compensation effect due to the incorporation of boron atoms into the lattice. The defect-free regions of the doped layers are thicker and closer to coherency than those in the undoped layers of the same composition and the defect density in the upper region of the layers is significantly reduced. As a result of the strain compensation effect, a 30-nm-thick heavily doped layer with xϭ0.21 is found to be defect free and fully strained throughout its whole thickness although the corresponding undoped layer was partially relaxed and showed strain-relieving defects.

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Section: ͑3͒mentioning

confidence: 99%

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Rodrı́guez

Kling

et al. 1997

Journal of Applied Physics

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“…Thus the size contribution from Eqs. [45][46][47]. On the other hand, in the above mentioned Si:Ga case [6] a v is determined to be negative.…”

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confidence: 99%

Experimental doping dependence of the lattice parameter inn-type Ge: Identifying the correct theoretical framework by comparison with Si

Senaratne

Kouvetakis

et al. 2016

Phys. Rev. B

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“…15,16 The experimental value reported in the literature for pure Si, b Si 5.3 3 10 224 cm 3 , was used to calculate N B in the doped region of the substrate. 15,16 The experimental value reported in the literature for pure Si, b Si 5.3 3 10 224 cm 3 , was used to calculate N B in the doped region of the substrate.…”

Section: Methodsmentioning

confidence: 99%

Strain compensation by heavy boron doping in Si_1–xGe_x layers grown by solid phase epitaxy

Rodrı́guez

Sanz‐Hervás

et al. 1997

J. Mater. Res.

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The strain compensation produced by heavy boron doping in Si 12x Ge x layers with x 0.21, 0.26, and 0.34 grown by solid phase epitaxy on (001) Si wafers has been analyzed using high resolution electron microscopy, high resolution x-ray diffractometry, and ion channeling. The structure of the epilayers consists of a defect-free region located next to the layer-substrate interface and a top region which contains strain-relieving defects. In the undoped samples the defect-free layers are partially relaxed and their relaxation increases as the Ge fraction increases. Substitutional boron incorporated to the SiGe lattice to levels of 2.8 6 0.3 3 10 20 cm 23 during the growth process reduces the lattice mismatch between the epilayers and the substrate. The boron-doped, defect-free layers are thicker than the corresponding undoped layers of the same Ge content and their strain relaxation is lower. It has been shown that it is possible to grow at least 27 nm thick defect-free and fully strained heavily boron-doped layers with x 0.21 by solid phase epitaxy.

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Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

Abstract: Articles you may be interested inBoron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding Appl. Phys. Lett.Temperature transients in heavily doped and undoped silicon using rapid thermal annealing

Cited by 6 publications

References 14 publications

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Experimental doping dependence of the lattice parameter inn-type Ge: Identifying the correct theoretical framework by comparison with Si

Strain compensation by heavy boron doping in Si_1–xGe_x layers grown by solid phase epitaxy

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Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

Abstract: Articles you may be interested inBoron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding Appl. Phys. Lett.Temperature transients in heavily doped and undoped silicon using rapid thermal annealing

Cited by 6 publications

References 14 publications

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy

Experimental doping dependence of the lattice parameter inn-type Ge: Identifying the correct theoretical framework by comparison with Si

Strain compensation by heavy boron doping in Si1–xGex layers grown by solid phase epitaxy

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Strain compensation by heavy boron doping in Si_1–xGe_x layers grown by solid phase epitaxy