2002
DOI: 10.4028/www.scientific.net/msf.389-393.905
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Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts

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Cited by 3 publications
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“…Ohi et al, 2002;Gasser et al, 1997;Roccaforte et al, 2001;Madsen et 1998; Litvinov et al, 2002;Marinova et al, 1996. The dominant phase formed is almost independent of the polytype, the polarity of the SiC and the details of the annealing cycle.…”
Section: Reaction Productsmentioning
confidence: 80%
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“…Ohi et al, 2002;Gasser et al, 1997;Roccaforte et al, 2001;Madsen et 1998; Litvinov et al, 2002;Marinova et al, 1996. The dominant phase formed is almost independent of the polytype, the polarity of the SiC and the details of the annealing cycle.…”
Section: Reaction Productsmentioning
confidence: 80%
“…Silicon rich silicides can be observed at the interface of Ni 2 Si and SiC (Cao et al, 2005). Increasing temperature to above 1000°C results in the formation of a NiSi thin film (Litvinov et al, 2002;Kestle et al, 2000& Marinova et al, 1996. …”
Section: Reaction Productsmentioning
confidence: 93%