Effect of quantity of spraying solution on the properties of spray deposited fluorine doped tin oxide thin films

Yadav, Abhijit A.; Masumdar, E.U.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

doi:10.1016/j.physb.2009.03.006

Cited by 44 publications

(23 citation statements)

References 28 publications

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“…This decrease in band gap can be attributed to a decrease in carrier concentration of the film due F doping. Similar optical band gap value was reported for the SnO 2 : F film [5]. One can notice that this value is very close to the band gap of promising materials for solar cells and optoelectronic devices.…”

supporting

confidence: 87%

“…This value is lower than to the value of published results [5]. This decrease in band gap can be attributed to a decrease in carrier concentration of the film due F doping.…”

contrasting

confidence: 68%

“…In these cases, knowledge about the contact properties is very scarce [2][3][4]. Among the various deposition techniques, spray pyrolysis is well suited for the preparation of doped tin oxide thin films because of its simple and inexpensive experimental arrangement, ease of adding various doping materials, reproducibility, high growth rate and mass production capability for uniform large area coatings [5]. Fluoride tin oxide has numerous applications because of their high optical transparency in the visible region, good electrical conductivity and the high infrared reflectivity [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Hadi

2014

ILCPA

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In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV-Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO 2 : Ffilm was deduced. From (I-V) and (C-V) measurements, the barrier height ∅ for FTO/PS diode was of 0.77 eV, and the built in voltage V bi , which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

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supporting

confidence: 87%

“…This value is lower than to the value of published results [5]. This decrease in band gap can be attributed to a decrease in carrier concentration of the film due F doping.…”

contrasting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

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Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Hadi

2014

ILCPA

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“…Tin oxide (SnO 2 ) lms have a wide range of applications because of their excellent performance along with high mechanical, chemical and environmental stability and low cost material [15]. By volume, the most deposited transparent conductive oxide (TCO) today is SnO 2 , which is used in IR-ecient architectural window application.…”

Section: Introductionmentioning

confidence: 99%

“…Among the various deposition techniques, spray pyrolysis is well suited for the preparation of doped and undoped tin oxide thin lms because of its simple and inexpensive experimental arrangement, ease * corresponding author; e-mail: smrozati@guilan.ac.ir of adding various doping materials, reproducibility, high growth rate, and mass production capability for uniform large area coatings [15].…”

Section: Introductionmentioning

confidence: 99%

Toward Finding a Commercial Method for Deposition of Nanostructured SnO₂Thin Films

Memarian

Rozati

2012

Acta Phys. Pol. A

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Nanostructured tin oxide (SnO2) thin lms have been prepared by spray pyrolysis technique. The eects of deposition conditions such as substrate temperature and tin chloride concentration in the precursor solution on physical properties of lms have been investigated. The physical characterization of samples was carried out by UV-VIS spectroscopy, X-ray diraction, scanning electron microscopy, and the Hall eect experiment for optical, structural, morphological and electrical studies, respectively. The lms are polycrystalline in nature with a tetragonal crystal structure. The preferred orientation has been changed by changing the deposition parameters. In the case of changing the substrate temperature, (211) was found as the preferred orientation, while by changing the molarities of the solution, (301) orientation was grown as well as (211). The deposition temperature was optimized to 450• C; whereas the optimum solution concentration was found to be 0.2 mol/L. Films deposited at foregoing conditions have good optoelectrical properties which make them suitable for applying in dierent optoelectronic devices.

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Characterization of SnO₂:F thin films deposited by an economic spray pyrolysis technique

Memarian

Rozati

Elangovan

et al. 2010

Phys. Status Solidi (c)

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Fluorine doped tin oxide (FTO) semiconductor thin films were deposited on glass substrates using spray pyrolysis technique and the effect of fluorine (F‐) doping (varying 0‐30 at%) is explored. X‐ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The crystallinity of undoped films is enhanced with the increase in F‐doping. The films doped with 25 at% F show a strong orientation along (101) plane. The grain size of the undoped films (214 nm) is increased with the increase in F‐doping level to reach a maximum of 415 nm (25 at% F). A minimum sheet resistance of ∼5.4 Ω/□ obtained for the 30 at% F doped films is among the lowest reported values. The average visible transmittance (400‐700 nm) of the undoped films (61.4%) is increased with the increasing F‐doping to reach a maximum of 74.5% (25 at%. F). The films doped with 25 at.% F showed high value of figure of merit (4.55 × 10‐3 Ω‐1). The obtained results authenticate the influence of F‐doping on the properties of the deposited films. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of quantity of spraying solution on the properties of spray deposited fluorine doped tin oxide thin films

Cited by 44 publications

References 28 publications

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Toward Finding a Commercial Method for Deposition of Nanostructured SnO₂Thin Films

Characterization of SnO₂:F thin films deposited by an economic spray pyrolysis technique

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Effect of quantity of spraying solution on the properties of spray deposited fluorine doped tin oxide thin films

Cited by 44 publications

References 28 publications

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

Toward Finding a Commercial Method for Deposition of Nanostructured SnO2Thin Films

Characterization of SnO2:F thin films deposited by an economic spray pyrolysis technique

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Product

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Toward Finding a Commercial Method for Deposition of Nanostructured SnO₂Thin Films

Characterization of SnO₂:F thin films deposited by an economic spray pyrolysis technique