Effect of PyC Inner Coating on Preparation of 3C-SiC Coating on Quartz Glass by Chemical Vapor Reaction

Wu, Jian; Qian, Shengteng; Huo, Tongguo; Zheng, Junjie; Zhang, Pinlong; Dai, Yu; Geng, Dongsheng

doi:10.3389/fmats.2022.897900

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…This corrosion-resistant property makes SiC a preferred material in the field of chemical processing and manufacturing, especially in applications requiring acid-resistant materials, such as pickling processes, production and usage of acidic catalysts, and other similar scenarios. As shown in Figure , Wu and the team developed a cubic polycrystalline SiC (3C-SiC) coating on quartz glass (QG) using a two-step chemical vapor deposition (CVD) process, incorporating a thin PyC layer as a buffer. The SiC/PyC/QG coating demonstrated excellent acid resistance in a mixed solution of 5% HF and 5% HCl, with ∼33% smaller weight loss compared to pure QG after an 8 h acid test at 80 °C.…”

Section: Basic Theory and Properties Of Sicmentioning

confidence: 99%

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Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Chen,

Zhang,

Zhao

et al. 2024

Langmuir

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Silicon carbide, as a third-generation semiconductor material, plays a pivotal role in various advanced technological applications. Its exceptional stability under extreme conditions has garnered a significant amount of attention. These superior characteristics make silicon carbide an ideal candidate material for high-frequency, high-power electronic devices and applications in harsh environments. In particular, corrosion resistance in natural or artificially acidic and alkaline environments limits the practical application of many other materials. In fields such as chemical engineering, energy conversion, and environmental engineering, materials often face severe chemical erosion, necessitating materials with excellent chemical stability as foundational materials, carriers, or reaction media. Silicon carbide exhibits outstanding performance under these conditions, demonstrating significant resistance to corrosive substances such as hydrochloric acid, sulfuric acid, nitric acid, and alkaline substances such as potassium hydroxide and sodium hydroxide. Despite the well-known chemical stability of silicon carbide, the stability conditions of its different types (such as 3C-, 4H-, and 6H-SiC polycrystals) in acidic and alkaline environments, as well as the specific corrosion mechanisms and differences, warrant further investigation. This Review not only delves deeply into the detailed studies related to this topic but also highlights the current applications of different silicon carbide polycrystals in chemical reaction systems, energy conversion equipment, and recycling processes. Through a comprehensive analysis, this Review aims to bridge research gaps, offering a comparative analysis of the advantages and disadvantages between different polymorphs. It provides material scientists, engineers, and developers with a thorough understanding of silicon carbide's behavior in various chemical environments. This work will propel the research and development of silicon carbide materials under extreme conditions, especially in areas where chemical stability is crucial for device performance and durability. It lays a solid foundation for ultra-high-power, high-integration, high-reliability module architectures, supercomputing chips, and highly safe long-life batteries.

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Section: Basic Theory and Properties Of Sicmentioning

confidence: 99%

“…Preparation of SiC composite materials containing heterojunctions, demonstration of their mechanical properties, and schematic of high-temperature resistance . Reproduced with permission from ref . Copyright 2022 Frontiers.…”

Section: Basic Theory and Properties Of Sicmentioning

confidence: 99%

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Chen,

Zhang,

Zhao

et al. 2024

Langmuir

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“…In MBE, a novel arc plasma C gun source was used to prepare MQWs and SLs [124][125][126]. Ultrahigh UH-CVD, reduced pressure RP-CVD, vertical reactor (V-CVD) [127][128][129][130][131][132][133], and MOCVD techniques have also been employed for achieving different Si1−xGexC/Si, Ge1−xSnxC/Si, GeC/SiC, and GeC/Si epilayers [134,135]. Several optical and structural studies have been reported exploiting IR, RSS [136], high-resolution X-ray diffraction (HR-XRD) [137], photoluminescence (PL) [138][139][140], high-resolution transmission electron microscopy (HRTEM), and spectroscopic ellipsometry (SE) techniques [141,142].…”

Section: Introductionmentioning

confidence: 99%

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Talwar,

Semone,

Becla

2024

Materials

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Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal / as well as graded SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable “downward” shifts of high frequency COMs and “upward” shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.

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“…These defects propagate to the surface, giving rise to macroscopic defects. Previous research has focused on growing 3C-SiC on 4H-SiC using various techniques, including chemical vapor deposition (CVD) [23][24][25], solution growth [26], vapor-liquid-solid (VLS) methods [27], and sublimation methods [28]. However, most of these studies have primarily concentrated on the growth of 3C-SiC on the Si face, resulting in limited singlelayer growth.…”

Section: Introductionmentioning

confidence: 99%

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps

et al. 2023

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In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels. With an increase in the source gas flow rate, a notable transition in the crystalline structure of the epitaxial layer was observed, gradually shifting from 4H-SiC to 3C-SiC. Furthermore, the quality of the epitaxial layer correspondingly exhibited degradation. Specifically, for epitaxial films grown under moderate gas flow rates, the central region demonstrated a crystalline structure of 4H-SiC, while the outer ring region exhibited a crystalline structure of 3C-SiC. Using a scanning electron microscope (SEM) to observe the transition zone of the two regions, a region of 3C/4H overlapping growth below it was found. Bright areas corresponded to 3C, while dark areas corresponded to 4H, as confirmed by Raman spectroscopy and other SEM images. The growth interfaces of the two crystal types were clearly discernible and relatively compact. Furthermore, the growth angles of the two crystal types and their correlation with the cutting direction strongly suggest that this overlap is related to the formation of micro-nano steps on the substrate surface.

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Effect of PyC Inner Coating on Preparation of 3C-SiC Coating on Quartz Glass by Chemical Vapor Reaction

Cited by 6 publications

References 21 publications

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps

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