Effect of pumping delay on the modulation bandwidth in double tunneling-injection quantum dot lasers

Asryan, Levon V.

doi:10.1364/ol.42.000097

Cited by 7 publications

(6 citation statements)

References 23 publications

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“…Therefore, as the temperature rises, the increase of coefficient C is attributed to the aggravated interaction of Auger-type particles promoted by the high temperature, while the decrease in the fraction of Cn 3 is due to the occurrence of Auger-induced leakage process. Besides, the severe defect-assisted emission, manifesting as the elevation of An term under high-current and high-temperature conditions, also results in electrons tunneling from MQWs along structure defects such as dislocations, further facilitating the carrier leakage from MQWs [31]. Consequently, both the Auger-induced process and the defect-assisted tunneling contribute to the carrier leakage, enhancing the non-radiative recombination and efficiency droop, particularly under the high forward current and the elevated temperatures.…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Peng

Guo

et al. 2020

IEEE Photonics J.

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We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination and carrier leakage are highly associated with the poor thermal stability. The existence of Auger recombination and carrier leakage is identified by the m-power method. A modified ABC model with an additional term f(n) related to carrier leakage is employed to analyze the evolution of multiple recombination mechanisms. The SRH process strongly suppresses both Auger recombination and carrier leakage at low currents. At high currents, the latter two processes are responsible for the efficiency droop and exhibit an anti-correlation upon temperature.

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Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Peng

Guo

et al. 2020

IEEE Photonics J.

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“…As stated above, in this paper the switchable two-color solution-processed QD-laser exploiting SECs has been proposed by the ability to choose lasing wavelengths. In this QD-laser, the quantum well (QW) 44,54 is used as the SEC to control the lasing channels. Here, the most usual 1.31 μm and 1.55 μm wavelengths in the telecommunication applications are considered.…”

Section: The Proposed Switchable Two-color Qd-laser Using Secsmentioning

confidence: 99%

“…Achieving to switchable two-color QD-laser is possible by using SECs, which can inject the electrons into the certain QDs. In addition, coupling the QW leads to the improvement of the fast transition of the carrier 44 . In this model, utilizing two different sizes of QDs in the active region of QD-laser results in two-channel emission wavelengths while the lasing from each channel can be controlled by the independent SECs as an injection of carriers.…”

Section: Selective Energy Contactsmentioning

confidence: 99%

“…3(C),(D) the electrons injected from the right (left) SEC coupled to big (small) QDs and Scientific RepoRtS | (2020) 10:5273 | https://doi.org/10.1038/s41598-020-60859-w www.nature.com/scientificreports www.nature.com/scientificreports/ tunneled between QDs. The tunneling time τ tn i , is defined as follows, which T trans is the transmission rate of carriers and N SDi is the surface density of QDs ensemble 44 . where t i 0, 1 τ − is initial tunneling time when GS is empty.…”

Section: Selective Energy Contactsmentioning

confidence: 99%

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Switchable Multi-Color Solution-Processed QD-laser

Matloub

Amini

Rostami

2020

Sci Rep

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In this paper, for the first time, the switchable two-color quantum dot laser has been realized considering solution process technology, which has both simultaneous and lonely lasing capability exploiting selective energy contacts. furthermore, both channels can be modulated independently, which is a significant feature in high-speed data transmission. To this end, utilizing superimposed quantum dots with various radii in the active layer provides the different emission wavelengths. In order to achieve the different sizes of QDs, solution process technology has been used as a costeffectiveness and fabrication ease method. Moreover, at the introduced structure to accomplish the idea, the quantum wells are used as separate selective energy contacts to control the lasing channels at the desired wavelength. It makes the prominent device have simultaneous lasing at different emission wavelengths or be able to lase just at one wavelength. the performance of the proposed device has been modeled based on developed rate equation by assuming inhomogeneous broadening of energy levels as a consequence of the size distribution of quantum dots and considering tunnel injection of carriers into the quantum dots via selective energy contacts. Based on simulation results, the simultaneous lasing in both or at one of two wavelengths 1.31 μm and 1.55 μm has been realized by the superimposition of two different sizes of InGaAs quantum dots in a single cavity and accomplishment of selective energy contacts. Besides, controlling the quantum dot coverage leads to managing the output power and modulation response at the desired wavelengths. By offering this idea, one more step is actually taken to approach the switchable QD-laser by the simple solution process method.Nowadays, multi-wavelength lasers have been committed to numerous applications in the field of imaging, tomography and ultra-fast data communication. Thus, the ability to achieve simultaneous lasing at different wavelengths has been the subject of enormous research in the past few years 1-5 . In addition, lasers have drawn great attention due to their wide potential applications in all-optical switching system 6 and on/off switching behavior 7 , ultrafast photonics 8-10 , playing roles as the light irradiation source for cancer therapy 11-14 , analyzing the photo-thermal properties 15-17 and excitation source for Raman spectra measurement 18,19 . Moreover, the high performance of lasers can be accomplished by utilizing quantum dots (QDs) in the active region of laser diodes. Hence, the quantum dot lasers (QD-Lasers) have been received great attention in recent decades among different types of laser structures [20][21][22][23][24][25] . The low threshold current, high modulation bandwidth, narrow linewidth, low-frequency chirp, and temperature stability are the superior advantages of QD-lasers due to the QDs' unique properties such as quantum confinement effect and delta-function-like density of states 4,26-29 . Consequently, the realization of switchable multi-wavelength las...

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“…This approach is particularly interesting because it allows for more independent control of the QDs, as well as the ability to inject carriers from the QW to the QDs [19][20][21][22]. The nanostructures obtained via this second approach have been explored most recently to improve the device performance for lasers and photovoltaics [22,23]. In view of the significance of the applications and the complexities of the structures, carrier dynamics play a very important role in the improvement of device performances while carrier injection and processes involved in vertical and lateral transfer have been well investigated for several hybrid systems.…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

Wang

Sheng

Yuan

et al. 2018

Journal of Luminescence

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Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum dot (QD)-In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using photoluminescence (PL) spectroscopy. This coupled hybrid nanostructure shows a single PL peak from the QD emission at low excitation intensity and a band filling behavior is observed as the excitation intensity increases, suggesting that there exists a channel to capture carriers from the QW to the QDs. Time resolved PL (TRPL) measurements extract a carrier tunneling time of 103.7ps, which is only one third of the theoretical prediction. A double-channel resonant carrier tunneling mechanism from the QW to the wetting layer and to the fifth excited state of the QDs and then carrier relaxation into lower discrete QD energy states is proposed to explain this fast 2 carrier tunneling. The double-channel resonant carrier tunneling mechanism is qualitatively supported through the analysis of the excitation-dependent PL spectra as well as the PL excitation spectra. These results enrich our understanding of carrier dynamics in coupled QD and QW hybrid structures.

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Effect of pumping delay on the modulation bandwidth in double tunneling-injection quantum dot lasers

Cited by 7 publications

References 23 publications

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Switchable Multi-Color Solution-Processed QD-laser

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

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