Effect of processing parameters on electroless Cu seed layer properties

Ee, Y.C.; Chen, Zhong; Chan, Lap; See, A.; Law, S. B.; Tee, K. C.; Zeng, Kaiyang; Shen, Lu

doi:10.1016/j.tsf.2004.05.018

Cited by 23 publications

(15 citation statements)

References 14 publications

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“…It was noted that 60 min was the critical time that a continuously dense Cu film starts forming. This work shows that before a dense film was formed, the orientation of Cu grains was probably either random or preferred (1 0 0) [42], and the diffraction intensity on films below 30 min was too low to reach a solid conclusion. However, it was evident that once a dense film is formed, the (1 1 1) texture was quickly established.…”

Section: Resultsmentioning

confidence: 83%

Novel electroless copper deposition on carbon fibers with environmentally friendly processes

Byeon

Kim

2010

Journal of Colloid and Interface Science

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Section: Resultsmentioning

confidence: 83%

Novel electroless copper deposition on carbon fibers with environmentally friendly processes

Byeon

Kim

2010

Journal of Colloid and Interface Science

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“…An oxide etching is therefore often added to the solution to yield thicker films . Precise control of nanoparticles diameter and density with this approach is difficult due to the relatively high kinetic of the nanoparticles’ growth on the surface …”

Section: Introductionmentioning

confidence: 99%

Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth

Roussey

Martínez

Copéret

et al. 2017

Helvetica Chimica Acta

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Cu Nanoparticles on TiN coated silicon substrates were prepared from well‐defined molecular precursors [CuOtBu]4 in non‐aqueous solutions. The formation of nanoparticles takes place via galvanic displacement and allows for the formation of narrowly distributed Cu nanoparticles with controlled size ranging from 8 to 35 nm through the control of the oxidation state of the TiN surface. The activity of these nanoparticles arrays in low temperature Si nanowires growth by the vapor‐solid‐solid mechanism was also investigated and larger Cu nanoparticles were found to yield higher Si nanowires density.

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“…Most electroless copper methods deposit metal in alkaline bath. This method needs some activation and sensitization pretreatment and then the copper metal layer is oxygenated easily in the air 10, 16, 17. In this study, the acid electroless copper method is used to deposit copper‐sulfide deposition on the substrate for EMI shielding effectiveness (SE), and the copper‐sulfide compound contains antioxidation in the air.…”

Section: Introductionmentioning

confidence: 99%

Effect of weak reductant on properties of electroless copper polyacrylonitrile nanocomposites for electromagnetic interference shielding

Tsao

Chen

Huang

et al. 2010

J of Applied Polymer Sci

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In this work, the electroless copper method with different reductant compositions (NaHSO 3 /Na 2 S 2 O 3 Á5H 2 O and Na 2 S 2 O 3 Á5H 2 O) without sensitizing and activating, was used to deposit copper-sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO 3 , in the electroless copper method was used to control the phase of copper-sulfide deposition. The Cu x(x¼1-1.8) S was deposited on the PAN (Cu x S-PAN) by reductant composition (NaHSO 3 /Na 2 S 2 O 3 Á5H 2 O) and the Cu x(x¼1-1.8) S deposition of Cu x S-PAN possesses three kinds of coppersulfide phases (CuS, Cu 1.75 S and Cu 1.8 S). However, the electroless copper with reductant was only Na 2 S 2 O 3 Á5H 2 O (without weak reductant, NaHSO 3 ), the hexagonal CuS deposition was plated on the PAN (CuS-PAN) and increased the EMI shielding effectiveness of CuS-PAN composites about 10-15 dB. In this study, the best EMI SE of CuS-PAN and Cu x S-PAN composites were about 27-30 dB and 15-17 dB respectively, as the cupric ion concentration was 0.24 M. The volume resistivity of CuS-PAN composite was about 1000 times lower than that of Cu x S-PAN composite and lowest volume resistivity of CuS-PAN composites was 0.012 X cm, as the cupric ion concentration was 0.24 M. V C 2010Wiley Periodicals, Inc. J Appl Polym Sci 118: [936][937][938][939][940][941][942] 2010

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Effect of processing parameters on electroless Cu seed layer properties

Cited by 23 publications

References 14 publications

Novel electroless copper deposition on carbon fibers with environmentally friendly processes

Novel electroless copper deposition on carbon fibers with environmentally friendly processes

Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth

Effect of weak reductant on properties of electroless copper polyacrylonitrile nanocomposites for electromagnetic interference shielding

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