Effect of pressure on the Raman modes of antimony

Wang, X.; Kunc, K.; Loa, I.; Schwarz, Ulrich; Syassen, K.

doi:10.1103/physrevb.74.134305

Cited by 90 publications

(100 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our experiments demonstrate that under compressive load (decrease in volume) amorphous GeSb crystallizes, forming crystalline phases analogous to Sb (22,23), which is known to crystallize explosively near room temperature (24). As shown in the X-ray diffraction data and Raman spectra under pressure (see Materials and Methods), crystallization (appearance of A7 structure Bragg peaks in Figs.…”

Section: Resultssupporting

confidence: 58%

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Shakhvorostov

Nistor

Krusin‐Elbaum

et al. 2009

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale.Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class.ab initio simulations ͉ structural phase change ͉ electronic phase transitions ͉ ac conductivity

show abstract

Section: Resultssupporting

confidence: 58%

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Shakhvorostov

Nistor

Krusin‐Elbaum

et al. 2009

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

show abstract

“…Such low frequencies have only been observed in pressure-dependent experiments in the GPa range. 28 The observed nonthermal phonon softening is comparable to the one measured in the time domain with similar electronic excitation densities clearly demonstrating that the electronic screening of the crystal potential induces a large phonon softening and that anharmonicity only plays a minor role, if any. One of the most striking observations it that the line shape for the first few picoseconds after excitation is substantially different for low and high excitation densities.…”

supporting

confidence: 65%

“…Another possibility would be that the new phase corresponds to one of the phases observed at high pressures ͑Ͼ8 GPa͒. 28 However, in that case one would expect a new mode on the high energy side of L1, which is not the case.…”

mentioning

confidence: 99%

Ultrafast photoinduced structure phase transition in antimony single crystals

2009

View full text Add to dashboard Cite

“….T his softening of the optical phonons in DFT calculations has been observed before, [14] and appears to be related to the strong electron-lattice interaction and the negative Grüneisen parameter in antimony [11] and similar materials,such as bismuth.…”

mentioning

confidence: 52%

“…[11] Correlation of AFM and statistical Raman microscopy (SRM) [12] in apolydisperse sample revealed that flakes with an apparent thickness below about 70 nm (ca. 17 layers) hardly show any measurable Raman signal (Figure 4b).…”

Section: Zuschriftenmentioning

confidence: 99%

Few‐Layer Antimonene by Liquid‐Phase Exfoliation

et al. 2016

View full text Add to dashboard Cite

We report on af ast and simple method to produce highly stable isopropanol/water (4:1) suspensions of few-layer antimonene by liquid-phase exfoliation of antimony crystals in aprocess that is assisted by sonication but does not require the addition of any surfactant. This straightforwardm ethod generates dispersions of few-layer antimonene suitable for on-surface isolation. Analysis by atomic force microscopy, scanning transmission electron microscopy, and electron energy loss spectroscopyc onfirmed the formation of highquality few-layer antimonene nanosheets with large lateral dimensions.T hese nanolayers are extremely stable under ambient conditions.T heir Raman signals are strongly thickness-dependent, which was rationalized by means of density functional theory calculations.Currently,two-dimensional (2D) materials represent one of the most active research areas.[1] Apart from various wellstablished 2D materials,s uch as graphene,h -BN,a nd MoS 2 , black phosphorus (BP) has received considerable attention over the last two years.[2] This is due to the fact that whereas graphene is an on-band-gap material and transition-metal dichalcogenides have ar elatively large band gap for certain optoelectronic applications (1.5-2.5 eV), [3] the direct band gap of few-and single-layer BP is approximately 1.5 eV, [4] and this material therefore has appealing properties for electronic and ultrafast optoelectronic applications.H owever,i solated layers of BP are extremely sensitive to the surroundings,and strongly degrade upon air exposure,w hich limits their application.[2b] Thus the discovery of new 2D materials with an appropriate band gap and stability under ambient conditions is ac hallenge of utmost importance. Along this front, antimony is ag ood candidate as it is in the same group in the periodic table as phosphorus and exhibits an allotrope closely related to BP (Figure 1a). Indeed, theoretical calculations [5] have estimated the band gap for asingle layer of antimony,orantimonene (we should point out that the name antimonene is not completely correct as there are no double bonds in its structure), to be about 1.2 eV.Antimonene has recently been isolated by mechanical exfoliation, and showed good stability under ambient conditions.[6] As for other 2D materials,m icromechanical exfoliation provides high-quality flakes but is unsuitable for mass production. Liquid phase exfoliation (LPE) has been successfully applied to generate single-or few-layer (FL) samples of several 2D materials on large scale, [7] including stable suspensions of few-layer BP.[8]Herein, we demonstrate that sonication of antimony crystals in a4 :1 isopropanol/water mixture without any surfactant produces av ery stable suspension of micrometerlarge FL antimonene over weeks,e ven under ambient conditions (see the Supporting Information for details). High-quality,f ew-layer antimonene nanosheets can thus be produced by liquid-phase exfoliation. Remarkably,t he FL antimonene suspensions and the layers isolated on surfaces are very stable,...

show abstract

Effect of pressure on the Raman modes of antimony

Cited by 90 publications

References 55 publications

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Ultrafast photoinduced structure phase transition in antimony single crystals

Few‐Layer Antimonene by Liquid‐Phase Exfoliation

Contact Info

Product

Resources

About