Effect of pressure on exciton energies of homoepitaxial GaN

Liu, Z.X.; Korona, K. P.; Syassen, K.; Kühl, J.; Pakuła, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.

doi:10.1016/s0038-1098(98)00381-0

Cited by 22 publications

(6 citation statements)

References 29 publications

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“…Similar linewidths have been reported earlier for GaN homoepitaxial films grown by MOCVD and molecularbeam epitaxy ͑MBE͒ on bulk GaN substrates. 11,12 However, the energy positions of the donor bound exciton transition for those samples ͑3.469 and 3.471 eV͒ are not in agreement with our value, indicating different residual strain. This small difference can be related to the significantly higher carrier concentrations in the bulk GaN substrates (ϳ5ϫ10 19 cm Ϫ3 ) ͑Ref.…”

Section: Resultscontrasting

confidence: 73%

Photoluminescence study of excitons in homoepitaxial GaN

Martı́nez-Criado

Miskys

Cros

et al. 2001

Journal of Applied Physics

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High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free-and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, E G ͑4.3 K͒ ϭ 3.506 eV, can be given. From the donor bound excitons and their ''two-electron'' satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the electron and hole masses have been obtained within the effective mass approximation.

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Section: Resultscontrasting

confidence: 73%

Photoluminescence study of excitons in homoepitaxial GaN

Martı́nez-Criado

Miskys

Cros

et al. 2001

Journal of Applied Physics

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“…Literature Refs. : Shan, 27 Franssen, 21, 25 Ibanez, 19 Gorczyca uniform and clustered simulations 7 and PL, 8 Liu, 28 by opening new radiative recombination pathways and/or by trapping charges even though they contribute negligibly to the absorption due to their low density of states. This explains the much lower pressure coefficients for PL spectra as the energy levels of localized defects are known to be much less sensitive to pressure than the band states.…”

mentioning

confidence: 99%

Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy

Millot

Geballe

et al. 2012

Appl. Phys. Lett.

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“…A comparison of the results presented above with homoepitaxial films grown by MOCVD and MBE on high pressure/high temperature synthesized bulk GaN substrates reveals similar linewidths, but slightly different energy positions of the donor bound-exciton transitions [96,97]. This shift in energy is most likely due to slight differences in residual strain.…”

Section: Structural and Electronic Properties Of Homoepitaxial Gan Lamentioning

confidence: 68%

Freestanding GaN‐substrates and devices

Miskys

Kelly

Ambacher

et al. 2003

phys. stat. sol. (c)

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Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short laser pulses on the thermal decomposition of GaN and possible applications of the laser-induced dissociation of GaN for fast etching of this material is discussed. Particular emphasis is placed on the defect-free delamination of large area GaN films with thicknesses ranging from 3 to 300 µm from sapphire substrates. The use of the resulting freestanding GaN films in device technology and homoepitaxy of III-nitrides are outlined. Specific examples are the flipchip bonding of freestanding InGaN/GaN LEDs to a silicon submount and the production of pseudosubstrates for the homoepitaxy of high quality GaN epilayers.

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Effect of pressure on exciton energies of homoepitaxial GaN

Cited by 22 publications

References 29 publications

Photoluminescence study of excitons in homoepitaxial GaN

Photoluminescence study of excitons in homoepitaxial GaN

Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy

Freestanding GaN‐substrates and devices

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