Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths

Prager, Lutz; Maršík, Přemysl; Wennrich, Luise; Baklanov, Mikhaı̈l R.; Naumov, Sergej; Pistol, L.; Schneider, Dieter; Gerlach, J. W.; Verdonck, Patrick; Buchmeiser, Michael R.

doi:10.1016/j.mee.2008.04.039

Cited by 75 publications

(43 citation statements)

References 7 publications

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“…A YM value as high as 8. 5 GPa is obtained after exposure to 172 nm photons at the expense of significant degradation of the low-k chemical and electrical properties. Preferential etching of the Si-low-k interface by HF is inferred from the decrease of the interfacial adhesion from 3 to 0.5 J/m 2 after HF dip.…”

Section: Discussionmentioning

confidence: 99%

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Impact of UV wavelength and curing time on the properties of spin-coated low-k films

Redzheb

Prager

Krishtab

et al. 2015

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/

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Advanced spin-on k 2.3 films with ~40% porosity were enabled by liquid phase self-assembly (LPSA) mechanism on Si substrates. UV-assisted thermal template removal is investigated as a faster alternative to the conventional thermal process. The as-deposited films were exposed to narrow-band UV light of 172 nm, 222 nm, 254 nm or 185/254 nm at 400°C for different time. The optical, mechanical, chemical and electrical properties of the resulting films are discussed in this work. Photons with wavelength of about 172 nm from one side are detrimental to the electrical and chemical properties of the low-k films but from the other side notably improve the porous low-k mechanical properties. Exposure to 222 nm light as short as 3 min. is more efficient in terms of template removal when compared to 2h thermal cure, while in both cases similar mechanical and electrical properties are reported. UV-cure using 254 nm or dual band 254/185 nm photons seem to have a minor contribution to the template removal efficiency for the applied doses. Higher doses are necessary in order to better understand the effective contribution of these photon energies. Finally, the HF etching mechanism is discussed.

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Section: Discussionmentioning

confidence: 99%

“…In order to exclude the effect of atmospheric gasses on the low-k during the UV-curing the processing chamber was evacuated down to 5 mbar. Next the chamber was flushed with high purity N2 to maintain a pressure of 20 mbar [5]. Afterwards, the temperature was increased from room temperature (RT) to 400°C by a heater element in about 2 min.…”

Section: Methodsmentioning

confidence: 99%

Impact of UV wavelength and curing time on the properties of spin-coated low-k films

Redzheb

Prager

Krishtab

et al. 2015

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/

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“…[1][2][3] The influence of the UV cure has already been investigated by several authors. [1][2][3][4][5][6] A complete removal of the porogens seemed to be very difficult and the remaining porogens created problems e.g. of high leakage current.…”

Section: Introductionmentioning

confidence: 99%

“…These results can be explained by the fact that the 172 nm photon is energetic enough to break the Si-C band while a 200 nm photon is not, as explained in more detail in ref. 5.…”

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confidence: 99%

Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-kMaterials

Verdonck

Besien

Vanstreels

et al. 2011

Jpn. J. Appl. Phys.

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In a recent study, low-k thin films with low dielectric constant (2:1) and high Young's modulus (>5 GPa) were obtained by introducing a remote plasma step between the traditional plasma enhanced chemical vapour deposition and UV curing. This study shows that the UV curing step with a narrow band lamp with wavelength of 172 nm induced more network Si-O and Si-H bonds and more densification than the curing step with a broadband lamp with wavelengths higher than 200 nm. As a consequence, the dielectric constant of the narrow band cured film was slightly higher, but Young's modulus and hardness were much improved. Electrical characterization showed good breakdown voltages and a more than sufficient time dependent dielectric breakdown reliability. The broadband lamp was then used to form thicker films which retained very well the characteristics of the thin films. #

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“…28 However, there is a significant difference in how the irradiation affects these two films. While for MeLK the decrease of the methylene peak can be attributed to a self-hydrophobization process 35 which is also supported by the increased intensity of the bands assigned to Si-O-Si and Si-CH 3 , the decrease of the ethylene peak in EtLK cannot.…”

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confidence: 99%

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Redzheb

Prager

Naumov

et al. 2016

Applied Physics Letters

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Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths

Cited by 75 publications

References 7 publications

Impact of UV wavelength and curing time on the properties of spin-coated low-k films

Impact of UV wavelength and curing time on the properties of spin-coated low-k films

Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-kMaterials

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

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