Effect of pressure and temperature on Raman scattering and an anharmonicity study of tin dichalcogenide single crystals

Anisotropic thermoelectric properties of layered compound SnSe 2

“…The thermal conductivity j was calculated by using the formula j = DqC p , where the density (q) was estimated by the Archimedes method, the thermal diffusivity coefficient (D) was measured using the laser flash method in argon flux by Netzsch LFA467 instrument, and the specific heat capacity (C p ) was computed by formula C p = C v + ɑ 2 BV m T, where C v was estimated by Dulong-Petit value, ɑ is the coefficient of thermal expansion (CTE) from Ref. [32], B is the bulk modulus (20 GPa), V m is the unit-cell volume (77.2 Å 3 ). Bulk samples were cut into square-like samples of 10 mm  10 mm  1.5 mm along different directions for thermal diffusivity measurements.…”

Pressure-induced coupled structural–electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa

“…A large number of investigations on the high-pressure phase stability and phase structure of SnS 2 have been performed by means of rstprinciples calculations, X-ray diffraction experiments and Raman scattering spectroscopy. [14][15][16][17] Filsø et al have investigated the bandgap energy of SnS 2 under high pressure through rstprinciples calculations. 14 Their results showed that the bandgap energy of SnS 2 decreased from 2.15 to 0.88 eV as the pressure was enhanced from 0 to 20.0 GPa and they predicted that the closure of the bandgap energy was at 33.0 GPa.…”

Bond-photon-phonon thermal relaxation in the M(X, X2) (M = Mo, Re, Ta, Ge, Sn; X = S, Se, and Te)

“…The BOLS reproduction of the measured Raman A 1g modes for (a) few-layer48,49 (FL) and monolayer 48 (ML) MoTe 2 , (b) (Ta, Sn, Re)-Se 2 ,[50][51][52][53][54] and (c) (Sn, Ge)-(S 2 , Se 2 ) 44. Theoretical reproduction of the measured Raman E 1 2g modes for (a) monolayer32,49 (ML), bilayer32,48 (BL), and few-layer48,49 (FL) MoTe 2 , (b) (Ta, Sn, Re)-Se 2 .…”