2016
DOI: 10.1364/ome.6.002892
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Effect of precursors on propagation loss for plasma-enhanced chemical vapor deposition of SiN_x:H waveguides

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Cited by 27 publications
(12 citation statements)
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“…High confinement is necessary for tailoring the waveguide dispersion to achieve phase matching in nonlinear processes as well as for tighter bends, thus allowing small footprints required in large-scale photonic systems. We compare the confinement factor and propagation loss achieved in this work with other state-of-the-art works realized in foundry compatible PECVD platform without any thermal treatment in Figure 6 [2,3,5,[27][28][29][30] .…”
Section: Fundamental Loss Extraction and Discussionmentioning
confidence: 97%
“…High confinement is necessary for tailoring the waveguide dispersion to achieve phase matching in nonlinear processes as well as for tighter bends, thus allowing small footprints required in large-scale photonic systems. We compare the confinement factor and propagation loss achieved in this work with other state-of-the-art works realized in foundry compatible PECVD platform without any thermal treatment in Figure 6 [2,3,5,[27][28][29][30] .…”
Section: Fundamental Loss Extraction and Discussionmentioning
confidence: 97%
“…It has exceptionally low leakage current and can be deposited via CMOS-compatible, low temperature sputtering. A silicon dioxide layer above the AlN's top electrode provides an optical buffer for the ultra-low-loss silicon nitride photonics layer [39] as seen in Fig. 1(c).…”
Section: Introductionmentioning
confidence: 99%
“…The use of deuterium rather than hydrogen in the silane precursor effectively eliminates the N-H bonds, the source of high 8 of 83 optical absorption in the telecom band, without needing to anneal the devices at high temperatures (> 1000 °C). A waveguide propagation loss of ~0.31 dB/cm in the range of 1.5 µm -1.6 µm was achieved by using isotopically substituted precursors in the plasmaenhanced chemical vapor deposition (PECVD) process to shift the N-H overtone absorption band from ~1.5 µm to ~2 µm [120]. Figure 4(b-ⅰ) shows a D-SiN MRR used for optical microcomb generation, which had a radius of ~23 µm and a Q factor of ~5.6 × 10 5 .…”
Section: Materials Platformsmentioning
confidence: 99%