Abstract:Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×1017 atoms/cm3, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N+ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wa… Show more
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