Effect of Postannealing on the Oxygen Precipitation and Internal Gettering Process in N/N+ (100) Epitaxial Wafers

Wijaranakula, W.; Matlock, J. H.; Mollenkopf, H. C.

doi:10.1149/1.2095513

Cited by 11 publications

(12 citation statements)

References 9 publications

(9 reference statements)

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“…The effect of postanneal on the formation of bulk microdefects and DNZ has been studied in detail (11). The formation mechanism of the bulk microdefects in the substrate wafers after the three-step anneal will be discussed here.…”

Section: Resultsmentioning

confidence: 99%

“…Notice that for homogeneous nucleation, the radius of the residual nuclei Rp D in Eq. [11] is neglected. For an example, see Ref.…”

Section: O = Llcpmentioning

confidence: 99%

“…As observed in epitaxial silicon materials having substrate wafers doped with antimony, the formation of bulk microdefects and the DNZ width depends upon the antimony doping concentration (8)(9)(10)(11). The dependence of oxygen precipitation on the antimony doping concentration is hypothesized to be due to a reduction in the intrinsic vacancy concentration (9).…”

mentioning

confidence: 99%

“…[7], the radius of oxide precipitate becomes / 2DtN( CpB CE) RpN = RpD + ~L [10] Cp For simplification, the background concentration CpB in Eq. [10] is replaced by the oxygen concentration q so that the radius of microprecipitates Rp N can be expressed as a function of distance from the sihcon surface x in the form Rp N = Re D + X/2DVoCEtN erf U(ps -1) [11] with…”

mentioning

confidence: 99%

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A Formation Mechanism of the Defect‐Free Denuded Zone in Antimony‐Doped Epitaxial Substrate Wafers

Wijaranakula¹,

Matlock²

1990

J. Electrochem. Soc.

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The effect of antimony on oxygen precipitation and formation of the defect-free denuded zone in substrate and epitaxial wafers after a two-and a three-step anneal was studied. The results show that the formation of the denuded zone is strongly affected by the epitaxial deposition process and antimony doping concentration. In interpreting this observation, a model for the formation of the defect-free denuded zone accounting for the effect of strain-free energy has been developed. This model considers that "grown-in" microprecipitate nuclei play a significant role in the formation of the denuded zone. Using the proposed model, the dependence of denuded zone width on the antimony doping concentration is hypothesized to be due to an increase in the total free-energy of an isolated precipitate. Antimony when doped at a high concentration causes an increase in the shear property of silicon and, therefore, the total free-energy of oxygen precipitates. This, in turn, causes a retardation of precipitate growth, particularly in the subsurface region where oxygen is already undersaturated.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Notice that for homogeneous nucleation, the radius of the residual nuclei Rp D in Eq. [11] is neglected. For an example, see Ref.…”

Section: O = Llcpmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

A Formation Mechanism of the Defect‐Free Denuded Zone in Antimony‐Doped Epitaxial Substrate Wafers

Wijaranakula¹,

Matlock²

1990

J. Electrochem. Soc.

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“…Gettering in highly doped antimony substrates, used for epitaxial wafers, is a major concern, especially regarding gate oxide and diode integrity. Significant efforts have been made to achieve good gettering in N/N + antimony doped epitaxial wafers (1)(2)(3)(4)(5)(6). The retardation of oxygen precipitation in this material has been attributed to the difficulty of incorporating oxygen during crystal growth (7) of the highly antimony doped crystal.…”

mentioning

confidence: 99%

Improvement to Bulk Oxygen Precipitate Density Necessary for Internal Gettering in Antimony Doped N/N+ Epitaxial Wafers Using the 3‐Step Technique and Ramped Nucleation

Comeau

1992

J. Electrochem. Soc.

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The addition of a ramped nucleation cycle, just after an initial oxidation, is shown to greatly increase the precipitation of interstitial oxygen during simulated processing on N/N + antimony doped epitaxial wafers. When used with fully processed wafers, the ramped nucleation improves internal gettering. Oxygen precipitate density and bulk stacking fault density achieved are about a factor of 100 higher when using ramped nucleation. These results indicate that N/N + antimony doped epitaxial wafers have an intrinsic gettering capability as good as that of lightly doped material when using an activation cycle (initial oxidation) and subsequent ramped nucleation. A method for calculating bulk stacking fault density is presented. It is shown that, at high concentration (above 107 cm-3), the square of the bulk stacking fault length is inversely proportional to their density. This finding indicates that the growth of bulk stacking faults is limited by the supply of interstitial silicon generated in the bulk during oxygen precipitate growth.

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The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing

Wijaranakula¹

1993

JEM

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Effect of Postannealing on the Oxygen Precipitation and Internal Gettering Process in N/N+ (100) Epitaxial Wafers

Cited by 11 publications

References 9 publications

A Formation Mechanism of the Defect‐Free Denuded Zone in Antimony‐Doped Epitaxial Substrate Wafers

A Formation Mechanism of the Defect‐Free Denuded Zone in Antimony‐Doped Epitaxial Substrate Wafers

Improvement to Bulk Oxygen Precipitate Density Necessary for Internal Gettering in Antimony Doped N/N+ Epitaxial Wafers Using the 3‐Step Technique and Ramped Nucleation

The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing

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