Effect of Post Deposition Annealing on the Structural and Electrical Properties of NbTiN Thin Films Deposited by Reactive Bias Target Ion Beam Deposition Technique

Farrahi, Tannaz; Cyberey, Michael E.; Eller, Michael B.; Lichtenberger, Arthur W.

doi:10.1109/tasc.2019.2910024

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…When examining the relationship between T c and XRD peak ratios across the radius of the wafer, we observe the following trend: the higher the texture along the (200) direction, the higher T c (see figure 7). This association between (200) texturing and an increase in T c has been noted previously in Nb x Ti (1−x) N films [17,18,26,34] and TiN films [35,36]. This has been explained by the increase of the film surface temperature, which alters the vacancy concentration and level of disorder, consequently affecting the xray scattering amplitudes.…”

Section: Resultssupporting

confidence: 78%

“…In addition, Nb x Ti (1−x) N has multiple advantages in processing and design including stability and scalability to small dimensions. Ti is a nitrogen getter, so Nb x Ti (1−x) N produces a low number of vacancies and high stability [15,16] even at higher temperatures [17,18] than those achieved in CMOS BEOL processes. In contrast to other superconducting nitrides, Nb x Ti (1−x) N exhibits a lower penetration depth, approximately 200-300 nm [19], and higher critical current density J c ≈ 100-140 mA µm −2 [20,21].…”

Section: Introductionmentioning

confidence: 99%

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Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.

Pérez Lozano,

Soulié,

Hodges

et al. 2024

Supercond. Sci. Technol.

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Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, NbxTi(1-x)N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, NbxTi(1-x)N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of NbxTi(1-x)N films at less than 2% thickness variability, 2.4% Tc variability and 3% composition variability. Film resistivity (140-375 ⋅cm) shows a strong correlation with the film oxygen content, while the critical temperature Tc (4.6 K - 14.1 K) is strongly affected by film stoichiometry and its microstructure has only a moderate effect on modifying Tc. Our results offer insights about the interplay between film stoichiometry, film microstructure and critical temperature.

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Section: Resultssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.

Pérez Lozano,

Soulié,

Hodges

et al. 2024

Supercond. Sci. Technol.

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“…The reduction of N( F ) weakens the electron-phonon coupling strength and hence the T C reduces. Earlier reports revealed that the T C of as deposited NbN films can be enhanced by vacuum annealing [38][39][40] but not in N 2 atmosphere [41,42]. These experiments further support our proposed mechanism of suppression of the T C in δ − NbN.…”

supporting

confidence: 89%

“…Formation of the N-interstitial defect complex in δ − NbN causes strong smearing of electronic structure by creating atomic disorder in the films and thus a significant reduction in the N( F ) which strongly influencing the electron-phonon coupling strength and consequently reduces the T C . Increase in the T C of vacuum annealed δ − NbN [38,39,40] and degradation of superconducting properties at N 2 atmosphere [41,42] further support our proposed mechanism. Based on above analysis we suggest that to obtain δ − NbN with high T C , films should be grown at Nb-rich conditions to avoid N interstitial defects and annealing of samples in a vacuum is recommended to eliminate residual N atoms.…”

supporting

confidence: 61%

Effect of disorder on superconductivity of NbN thin films studied using x-ray absorption spectroscopy

Kalal¹,

Nayak²,

Tayal³

et al. 2021

J. Phys.: Condens. Matter

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The superconducting transition temperature (T C ) of rock-salt type niobium nitride (δ − NbN) has been reported to vary in a large range (between 9 to 17 K) and the theoretically predicted value of 18 K has not achieved hitherto. Such a variation in the T C has been assigned to disorder present in δ − NbN irrespective of microstructure (polycrystalline or epitaxial), methods or conditions applied during the growth of NbN thin films. In this work, we investigate the atomic origin such suppression of T C in δ − NbN thin film by employing combined methods of experiments and abinitio simulations. Sputtered δ − NbN thin films with different disorder were studied using N and Nb K-edge x-ray absorption spectroscopy. A strong correlation between the superconductivity and the atomic distortion induced electronic reconstruction was observed. The theoretical analysis revealed that under N-rich conditions, atomic and molecular N-interstitial defects assisted by cation vacancies form spontaneously. As a result, the electronic densities of states around the Fermi level get smeared leading to a suppression of the T C in δ − NbN.

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Flexible NbTiN thin films for superconducting electronics

Nieto¹,

Hofer²,

Sirena³

et al. 2023

Physica C: Superconductivity and its Applications

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Effect of Post Deposition Annealing on the Structural and Electrical Properties of NbTiN Thin Films Deposited by Reactive Bias Target Ion Beam Deposition Technique

Cited by 5 publications

References 27 publications

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.

Effect of disorder on superconductivity of NbN thin films studied using x-ray absorption spectroscopy

Flexible NbTiN thin films for superconducting electronics

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