Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels

Ahn, Cheol Hyoun; Kim, Sohee; Kim, Ye Kyun; Lee, Ho Seong; Cho, Hyung Koun

doi:10.1016/j.tsf.2015.01.017

Cited by 25 publications

(18 citation statements)

References 22 publications

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“…To confirm contact resistivity between the electrode and the oxide channel, the transmission line method (TLM) is a very convenient tool [ 27 ]. Many groups have researched the contact resistivity between IGZO films and various electrodes by using TLM [ 28 , 29 ] and other techniques [ 30 , 31 ]. Generally, it is well-known that the contact resistivity between the electrode and the channel contributes on the electrical performance (on current and mobility) of TFTs [ 32 ].…”

Section: Resultsmentioning

confidence: 99%

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

et al. 2017

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We have examined the effects of oxygen content and thickness in sputtered InSnO (ITO) electrodes, especially for the application of imperceptible amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) in humidity sensors. The imperceptible a-IGZO TFT with 50-nm ITO electrodes deposited at Ar:O2 = 29:0.3 exhibited good electrical performances with Vth of −0.23 V, SS of 0.34 V/dec, µFE of 7.86 cm2/V∙s, on/off ratio of 8.8 × 107, and has no degradation for bending stress up to a 3.5-mm curvature. The imperceptible oxide TFT sensors showed the highest sensitivity for the low and wide gate bias of −1~2 V under a wide range of relative humidity (40–90%) at drain voltage 1 V, resulting in low power consumption by the sensors. Exposure to water vapor led to a negative shift in the threshold voltage (or current enhancement), and an increase in relative humidity induced continuous threshold voltage shift. In particular, compared to conventional resistor-type sensors, the imperceptible oxide TFT sensors exhibited extremely high sensitivity from a current amplification of >103.

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Section: Resultsmentioning

confidence: 99%

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

et al. 2017

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“…[57,58,63]. To improve the performance of the TFT, some groups came up with post-annealed TFTs like a 21.3 cm 2 /Vs TFT fabricated via O 2 annealing at 400°C by Geng et al [64], a 30.2 cm 2 /Vs TFT fabricated via O 2 annealing at 350°C by Ahn et al [65], etc. [66,67].…”

Section: Ald Oxide Semiconductors As Active Layersmentioning

confidence: 99%

Review of recent advances in flexible oxide semiconductor thin-film transistors

Sheng

Jeong

Han

et al. 2017

Journal of Information Display

107

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This paper describes the recent advances in flexible oxide thin-film transistors (TFTs), one of the rapidly emerging technologies for the next-generation display applications. First, the paper focuses on the effect of the buffer layer over the plastic substrate, which significantly influences the electrical performance and stability of oxide TFTs. Then oxide semiconductor TFTs fabricated through atomic layer deposition among the various oxide semiconductor fabrication methods were reviewed due to their potential as high-performance flexible TFTs. Finally, the mechanical fatigue behaviors of the TFTs were investigated, including the various mechanical factors, such as the bending radius, cycles, and stress directions. Structural solutions for the TFT were also introduced, such as TFT design modification and the use of the neutral plane concept, to improve the mechanical durability.

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“…Then, the ALD IZOs deposited at different temperatures (<200 °C) are used as the channel layer to study its effect on TFT device performance. To increase TFT performance, post-annealing is often pursued, such as O 2 annealing at temperatures exceeding 350 °C. ,− However, such high process temperatures cannot be used for flexible TFTs, due to the temperature constraint of the plastic substrate. A low-temperature process is desired for usage in flexible displays, which are expected to play an essential role in next-generation displays.…”

Section: Introductionmentioning

confidence: 99%

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

Sheng

Lee

et al. 2016

ACS Appl. Mater. Interfaces

130

106

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Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (HO) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (InO) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective InO and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the InO cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm V s and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

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Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels

Cited by 25 publications

References 22 publications

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

Review of recent advances in flexible oxide semiconductor thin-film transistors

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

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