Effect of Polaron formation in conduction and dielectric behavior in La0.7Sr0.25K0.05MnO3 oxide

Selmi, Marwa; Smida, Besma; Kossi, S. El

doi:10.1007/s10854-021-05321-x

Cited by 9 publications

(6 citation statements)

References 46 publications

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“…Furthermore, we have calculated the relaxation time from the peak frequency of M ″ at all temperatures and presented it in Figure d. The reducing relaxation time with the increase in temperature demonstrates the thermally activated polaron delocalization in the Cs 2 AgBiBr 6 crystal. , We have calculated activation energy ( E a ) using eq and found the E a = 87 meV in region I and E a = 202 meV in region II as presented in the inset of Figure d. The characteristic time constant τ 0 was calculated as 2.3 × 10 –5 second for region I and 1.9 × 10 –7 second for region II.…”

Section: Resultsmentioning

confidence: 95%

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

et al. 2022

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The lead-free Cs2AgBiBr6 double perovskites have recently emerged as promising candidates for optoelectronic applications due to their less toxicity and high stability. Although the photophysical study of Cs2AgBiBr6 has been extensively explored, the same for dielectric relaxation and carrier conduction remains elusive. Here, we uncover the dielectric relaxation and charge conduction mechanism in the Cs2AgBiBr6 single crystals using temperature-dependent electrochemical impedance spectroscopy in correlation with modulus spectroscopy. We found that the ionic displacement and space charge polarization are mainly responsible for the dielectric response. A sharp transition frequency as ∼191 Hz for 0 °C to ∼492 Hz for 90 °C was observed in the dielectric constant (ε′) versus temperature study, where dε′/dT exhibits a positive and negative coefficient below and above the transition frequency, respectively. Stevels model analysis suggests that the contribution of traps reduces with the increase in temperature and therefore conduction enhances. This model also confirms the polarons as the main conduction carriers in the Cs2AgBiBr6 semiconductor. The polaron hopping and binding energy were estimated as W H = 0.17 eV and E P = 0.34 eV, respectively. The binding energy of the polaron is larger than the room-temperature thermal energy, indicating the polaron hopping instead of free charge carrier transport as the dominant conduction mechanism. Furthermore, the imaginary part of -Z″ and M″ demonstrates the temperature-activated polaron relaxation from non-Debye type to Debye type process in Cs2AgBiBr6 crystals. Our study provides fundamental insights into the dielectric relaxation behavior needed for developing efficient dielectric switches and unveils the details of the carrier conduction mechanism in lead-free double perovskites.

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Section: Resultsmentioning

confidence: 95%

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

et al. 2022

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“…The mobility also increases because of a decrease in the potential barrier and the hopping length caused by increasing carrier density. Likewise, polaronic conduction may also explain conduction between neighboring sites that are separated by energy barriers [ 36 , 37 ].…”

Section: Resultsmentioning

confidence: 99%

Shockproof Deformable Infrared Radiation Sensors Based on a Polymeric Rubber and Organic Semiconductor H2Pc-CNT Composite

et al. 2023

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Polymeric rubber and organic semiconductor H2Pc-CNT-composite-based surface- and sandwich-type shockproof deformable infrared radiation (IR) sensors were fabricated using a rubbing-in technique. CNT and CNT-H2Pc (30:70 wt.%) composite layers were deposited on a polymeric rubber substrate as electrodes and active layers, respectively. Under the effect of IR irradiation (0 to 3700 W/m2), the resistance and the impedance of the surface-type sensors decreased up to 1.49 and 1.36 times, respectively. In the same conditions, the resistance and the impedance of the sandwich-type sensors decreased up to 1.46 and 1.35 times, respectively. The temperature coefficients of resistance (TCR) of the surface- and sandwich-type sensors are 1.2 and 1.1, respectively. The novel ratio of the H2Pc-CNT composite ingredients and comparably high value of the TCR make the devices attractive for bolometric applications meant to measure the intensity of infrared radiation. Moreover, given their easy fabrication and low-cost materials, the fabricated devices have great potential for commercialization.

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“…It is noted that s decreases with increasing temperature, this conrms the thermally activated polaron delocalization within Cs 2 AgSbCl 6 . 54,55 The t of ln(s) vs. 1/T (the inset of Fig. 9a) was used to calculate the activation energy, which was equal to 142 meV.…”

Section: Resultsmentioning

confidence: 99%

Interpretation of dielectric behavior and polaron hopping in lead-free antimony-based double perovskite

Ben Bechir,

Alresheedi

2023

RSC Adv.

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Effect of Polaron formation in conduction and dielectric behavior in La0.7Sr0.25K0.05MnO3 oxide

Cited by 9 publications

References 46 publications

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Shockproof Deformable Infrared Radiation Sensors Based on a Polymeric Rubber and Organic Semiconductor H2Pc-CNT Composite

Interpretation of dielectric behavior and polaron hopping in lead-free antimony-based double perovskite

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Effect of Polaron formation in conduction and dielectric behavior in La0.7Sr0.25K0.05MnO3 oxide

Cited by 9 publications

References 46 publications

Dielectric Relaxation and Polaron Hopping in Cs2AgBiBr6 Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs2AgBiBr6 Halide Double Perovskites

Shockproof Deformable Infrared Radiation Sensors Based on a Polymeric Rubber and Organic Semiconductor H2Pc-CNT Composite

Interpretation of dielectric behavior and polaron hopping in lead-free antimony-based double perovskite

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Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites