Effect of plating current density and annealing on impurities in electroplated Cu film

Liu, Chi-Wen; Wang, Ying-Lang; Tsai, Ming-Shih; Feng, Haidong; Chang, Shih-Chieh; Hwang, Gwo‐Jen

doi:10.1116/1.1931679

Cited by 27 publications

(15 citation statements)

References 8 publications

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“…Wang et al [11] noted that impurities in the Cu platings decreased the chemical resistance of Cu grains. The impurity incorporation also induced numerous defects, such as the interfacial discontinuity between the deposited Cu and the barrier metal, and corrosion voids in the conducting lines; specifically, the trapped impurities in the Cu deposits, such as SO 4 2-and Cl -, resulted in severe corrosion [15]. Because corrosion in the electroplated Cu was initiated in the area where crystallographic defects aggregated, the impurity incorporation was likely the root cause of pinhole formation in the postetching process (Fig.…”

Section: Accepted Manuscriptmentioning

confidence: 95%

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Formation mechanism of pinholes in electroplated Cu films and its mitigation

Chen

Hsieh²,

Lee

et al. 2015

Thin Solid Films

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Section: Accepted Manuscriptmentioning

confidence: 95%

“…additives (e.g., bis-(3-sulfopropyl) disulfide, SPS), or the materials leaching from the PCB substrates in the electroplating procedure and are usually included in the Cu deposits [15]. The Cl element originated from HCl added to the Cu sulfate electrolyte.…”

Section: Introductionmentioning

confidence: 99%

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Chen

Hsieh²,

Lee

et al. 2015

Thin Solid Films

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“…[37][38][39] It is a measure of the deposition rate, in terms of the number of Cu ions reduced at the cathode per unit area per unit time. For Cu samples plated with the SPS + PEG + Cl À system, the voiding level decreased with increasing current density, 20 as shown in Fig.…”

Section: Effect Of Current Densitymentioning

confidence: 99%

Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

Yin

Wafula

Dimitrov

et al. 2011

Journal of Elec Materi

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Kirkendall voiding'' in the interfacial Cu 3 Sn intermetallic compound is often observed in solder joints made between Sn-containing alloys and Cu interconnect pads, during extended thermal aging or electromigration testing. It is commonly believed that voids arise from the Kirkendall effect, i.e., the imbalance of diffusion fluxes of Cu and Sn atoms in Cu 3 Sn. However, recent studies have demonstrated that the propensity for voiding is greatly affected by the amount of organic impurities incorporated during Cu electroplating. The level of impurities was shown to depend on various electroplating parameters, such as current density, bath temperature, bath age, etc. In this study, a general picture is proposed to provide a better understanding of the effect of electroplating process parameters on Cu 3 Sn voiding. The picture correlates the level of impurity incorporation to (1) the applied electroplating overpotential, and (2) the crystallographic orientation of the Cu deposit. As a first-order approximation, the picture is supported by a variety of electroplating experiments, secondary-ion mass spectroscopy (SIMS), and x-ray diffraction (XRD) analysis.

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“…The amount of codeposited species may be higher in the LCD sample. 10 Thus, the rate of formation of vacancies in LCD sample appears to be quicker than the rate of removal of vacancies by recovery. However, the HCD sample behaves differently, in that the net vacancy change is negative.…”

mentioning

confidence: 97%

“…Typical incorporated elements in electroplated Cu are carbon, sulfur, and chlorine, as revealed by secondary ion mass spectroscopy, while carbon can be released out of the Cu layer at room temperature. 10,11 As a result, the density and/or the type of defects within the deposit will be changed during the self-annealing process. 12,13 Positron annihilation lifetime spectroscopy ͑PALS͒ is a powerful technique to probe vacancy-type defects by analyzing the annihilation characteristics of positrons trapped in open volume defects.…”

mentioning

confidence: 99%

Room-temperature microstructural evolution of electroplated Cu studied by focused ion beam and positron annihilation lifetime spectroscopy

Yin

Xia

Zhang

et al. 2008

Journal of Applied Physics

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Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam J. Appl. Phys. 98, 043504 (2005); 10.1063/1.2009813 Studies of the driving force for room-temperature microstructure evolution in electroplated copper films Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam J. Appl. Phys. 95, 913 (2004); 10.1063/1.1635648Seed layer dependence of room-temperature recrystallization in electroplated copper films

show abstract

Effect of plating current density and annealing on impurities in electroplated Cu film

Cited by 27 publications

References 8 publications

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

Room-temperature microstructural evolution of electroplated Cu studied by focused ion beam and positron annihilation lifetime spectroscopy

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