Effect of Plasma Treatment of the Tco on a-Si Solar Cell Performance

Demichelis, Francesca; Galloni, R.; Madan, A.; Pirri, Candido; Rava, P.; Ruth, M.; Schropp, R.E.I.; Summonte, C.; Tresso, Elena Maria

doi:10.1557/proc-258-905

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…In a-Si : H processing, hydrogen from silane and energetic plasmas can reduce SnO 2 or indium tin oxide (ITO) transparent conducting ®lms, forming elemental Sn and In, respectively. 57,58 As with CdTe devices, deterioration of the TCO/a-Si : H interface-forming elemental species results in reduced light transmission into the active i-layer of the device and degrades device performance. The degree of TCO reduction depends on a number of process parameters.…”

Section: Amorphous Silicon-based Devicesmentioning

confidence: 99%

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

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Thin-®lm device processing relies heavily on the integration of a variety of materials and a wide array of process steps. These include in some instances, the integration of wet' (chemical etching) and`dry' (deposition and plasma etching) process steps. As substrates are stepped through the process sequence, there are many surfaces that ultimately become interfaces that can have a dramatic impact on ultimate device performance. However, in thin-®lm R&D, these issues are not always carefully considered. This can have severe consequences when adapting an R&D-developed process into pilot production, and ®nally, into manufacturing. In this paper, we explore the impact of process integration issues on the microstructure and device performance for three prominent photovoltaic thin-®lm technologies (cadmium telluride, copper indium diselenide, and amorphous silicon). We also consider the impact of these concepts on future research directions in thin-®lm photovoltaics.

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Section: Amorphous Silicon-based Devicesmentioning

confidence: 99%

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

View full text Add to dashboard Cite

show abstract

Process integration issues in thin-film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

View full text Add to dashboard Cite

Thin‐film device processing relies heavily on the integration of a variety of materials and a wide array of process steps. These include in some instances, the integration of ‘wet’ (chemical etching) and ‘dry’ (deposition and plasma etching) process steps. As substrates are stepped through the process sequence, there are many surfaces that ultimately become interfaces that can have a dramatic impact on ultimate device performance. However, in thin‐film R&D, these issues are not always carefully considered. This can have severe consequences when adapting an R&D‐developed process into pilot production, and finally, into manufacturing. In this paper, we explore the impact of process integration issues on the microstructure and device performance for three prominent photovoltaic thin‐film technologies (cadmium telluride, copper indium diselenide, and amorphous silicon). We also consider the impact of these concepts on future research directions in thin‐film photovoltaics. Published in 2000 by John Wiley & Sons, Ltd.

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Effect of Plasma Treatment of the Tco on a-Si Solar Cell Performance

Cited by 2 publications

References 2 publications

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Process integration issues in thin-film photovoltaics and their impact on future research directions

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