Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity

Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)WxO3 perovskite

“…To further understand the thermal activation energy can be determined from an Arrhenius plot of the integrated intensity of the emission against reciprocal temperature as given by: 52 where I 0 and I ( T ) are the emission intensity at the initial temperature (10 K) and the measured temperature T , c is a constant, E a is the activation energy of thermal quenching, and k is the Boltzmann constant (8.629 × 10 −5 eV K −1 ). The plot of the normalized PL intensity versus 1000/ k B T is shown in Fig.…”

Robust Piezo-Phototronic Effect in Multilayer γ-InSe for High-Performance Self-Powered Flexible Photodetectors

“…It means that the piezoelectric properties of numerous semiconductors would provide additional opportunities to further optimize the performance of these devices. − Generally, semiconductor materials that exhibit the piezoelectric effect are mainly in the wurtzite family, such as ZnO, GaN, AlN, InP, etc . − However, high-performance photodetectors based on these traditional semiconductors are usually fabricated on rigid lattice-matched substrates ( e.g. , sapphire, silicon carbide, silicon) by sophisticated epitaxial growth with high temperature. − Therefore, in order to explore next-generation cost-effective flexible self-powered photodetector (SPPD) with high performance, carefully selection of active materials and elaborately design device architecture are both essential.…”

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

“…(band-to-band)[22,23].In addition, we observed a red shift in PL peak energy (P2) with the increase of power excitation for sample S2. All changes are illustrated with arrows in fig.3.…”

“…We notice that for sample S1 and S2, the PL intensity decreases with decreasing excitation power. By fitting the PL intensity drop, we obtained that the exponent n is at around of the unity and no saturation at higher excitation power [22] is detected (fig. 4).…”