Effect of Phosphorus and Boron Diffusion Gettering on the Light Induced Degradation in Multicrystalline Silicon Wafers

Chakraborty, Sagnik; Wilson, Marshall; Manalo, Maria Luz; Sarda, Abhay; Wong, Johnson; Sharma, Romika; Aberle, Armin G.; Li, Joel B.

doi:10.1016/j.egypro.2017.09.411

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…Gettering is especially widely used in Si-based solar cell production, for which low-cost solar-grade Si is increasingly used. [3][4][5][6][7][8][9][10] Such material contains various undesirable metal impurities (Au, Cu, Fe, Ni, etc.) and structural defects, such as grain boundaries, dislocations, second-phase precipitates, oxidation-induced stacking faults (OISF), etc.…”

Section: Introductionmentioning

confidence: 99%

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External Gettering of Metallic Impurities by Black Silicon Layer

Ayvazyan

Hakhoyan

Ayvazyan

et al. 2023

Physica Status Solidi (a)

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Black silicon (b‐Si) has many attractive properties and is currently being adopted in various fields of semiconductor technology. It is shown here that b‐Si during thermal activation may serve as an external gettering layer to remove metallic impurities and associated defects from bulk Si. The gettering efficiency by b‐Si is estimated according to the results of studying the resistivity, defect density, interstitial iron concentration, and effective minority carrier lifetime on gettered test and ungettered reference Si samples. It is shown that in the thermal oxidation process, the b‐Si layer serves as an effective drain for excess iron atoms and other fast‐diffusing impurities, thereby significantly reducing the density of oxidation‐induced stacking faults in Si. In addition, the resistivity of the substrates decreases, and the bulk carrier lifetime increases significantly. Finally, gettering by b‐Si is introduced into the solar cells fabrication process and its effect on solar cell current–voltage characteristics is investigated. It has been shown that all electronic parameters of the solar cells are improved. The conversion efficiency of ungettered solar cells is 16.8%, and for gettered solar cells, depending on the oxidation temperature, it increases by 1.36–1.96%.

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Section: Introductionmentioning

confidence: 99%

“…Since solar cells are wholesubstrate devices, it is preferable to use external gettering. External gettering is carried out by various methods, including phosphorus or boron diffusion, [4,5] ion implantation, [6] deposition of thin films, [7,8] laser processing, [9] grooving, [10] and others.…”

Section: Introductionmentioning

confidence: 99%