Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)

Abstract

Abstract:The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO 3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie's temperature the dielectric properties of BaTiO 3 undergo phase transition. The Landau-Devonshire's phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi 0.9 Sn 0.1 O 3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.