2013
DOI: 10.1016/j.mssp.2013.01.005
|View full text |Cite
|
Sign up to set email alerts
|

Effect of PEG-400 on the morphology and electrical properties of ZnO nanoparticles application for gas sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
7
0

Year Published

2014
2014
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 27 publications
(7 citation statements)
references
References 29 publications
0
7
0
Order By: Relevance
“…This trapping occurred due to the high R effects on carrier flow between the metal and semiconductor or it can be caused due to the surface roughness or lattice mismatch at the interface of metal-semiconductor [22][23][24]. Usually, in n-type ZnO a large amount of electrons tends to diffuse away to reach the interface layer but trapped by the trapping states by a positive ionized donor charges in the neighborhood of interface of metal-ZnO nanorods [23][24][25][26][27][28].Therefore a large amount of charges moved along the metal and semiconductor interfaces, so trapping states occurred in the interface layers due to the various metal-oxides addition [23][24][25].…”
Section: Frequency Dependent Impedance Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…This trapping occurred due to the high R effects on carrier flow between the metal and semiconductor or it can be caused due to the surface roughness or lattice mismatch at the interface of metal-semiconductor [22][23][24]. Usually, in n-type ZnO a large amount of electrons tends to diffuse away to reach the interface layer but trapped by the trapping states by a positive ionized donor charges in the neighborhood of interface of metal-ZnO nanorods [23][24][25][26][27][28].Therefore a large amount of charges moved along the metal and semiconductor interfaces, so trapping states occurred in the interface layers due to the various metal-oxides addition [23][24][25].…”
Section: Frequency Dependent Impedance Analysismentioning
confidence: 99%
“…Moreover, Schottky diodes are associated with quicker switching and lower turn on voltages compared to p-n junction diodes. There has been less work reported on the frequency dependent electrical characterization of metal-semiconductor Schottky nanocontacts [25][26]. Faraz Schottky nanocontacts [34].…”
Section: Introductionmentioning
confidence: 99%
“…5a illustrates the response obtained for the ZnO nanostructure synthesized at 120 1C. This sample showed the highest sensitivity to O 3 gas (m ¼ 2.4) even for a short exposure time (15 s), demonstrating an extremely high value, even at low concentrations, compared with the data in the literature [52]. In addition, this sample showed an n-type semiconductor behavior.…”
Section: Resultsmentioning
confidence: 64%
“…It can be seen that the strong diffraction peak of W2 is shorter than those of W1. This is because PEG-1000 addition in the system will extend the possible interactions and the reactivity control of the tungsten precursor, at the same time it also delay crystallization [ 6,7]. SEM images of W1 and W2 are presented in Figure 2.…”
Section: Resultsmentioning
confidence: 99%