Effect of Pb(Ti,Sn)O₃doping and sintering temperature on dielectric properties of novel temperature-stable BaTiO₃-based X8R ceramics

Abstract

The novel temperature-stable X8R dielectric materials could be sintered at 1180uC by doping Pb(Ti,Sn)O 3 additives into the BaTiO 3 ceramics, with a dielectric constant greater than 1550 at 25uC, dielectric loss lower than 2?0% and temperature coefficient of capacitance less than ¡15% from 255 to 180uC. The effects of Pb(Ti,Sn)O 3 additives and sintered temperature were discussed. Pb(Ti,Sn)O 3 can not only enhance the dielectric constant , but also improve the temperature stability of the BaTiO 3 ceramics effectively. The enhancement of Ti 4z 's polarisation and the smaller thickness of average grain shell resulted in increase in the dielectric constant. Sintered at a higher temperature, the temperature-capacitance curve was flattened. The decrease in the volume ratio of grain core to grain shell was helpful to improve the temperature stability.