Abstract:Amorphous indium gallium zinc oxide (IGZO) Thin Film Transistor (TFT) are widely applied in active-matrix display industry because of their excellent stability,low off-current,high field-effect mobility and good process compatibility.Among IGZO TFT device structures,Back channel etching (BCE) is favorable due to low production cost,short channel length and small SD-to-gate capacitance.in this work,BCE IGZO TFTs have been prepared with the passivation layer of silicon dioxide (SiO2),polyimide (PI) or SiO2-PI st… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.