Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling

Keerthivasan, T.; Aravindan, G.; Srinivasan, M.; Ramaswamy, Parvati

doi:10.1007/s12633-021-01538-x

Cited by 8 publications

(2 citation statements)

References 15 publications

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“…The quality of mc-Si ingots has been enhanced by keerthivasan et al through modifications made to the furnace geometry. [7][8][9] Extensive research has been conducted by Sugunraj et al to investigate the grain structure and impurity concentrations within mc-Si [10] and by Madhesh et al to investigate the temperature control and carbon oxygen concentration within mc-Si. [11] The saw damage removal, surface cleaning, polishing, and texturing of silicon wafer surfaces, as well as the recycling of silicon materials, are all obtained by wet-chemical etching processing.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

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This study proposes a method to enhance the efficiency and optical properties of silicon solar cells made from as‐cut boron‐doped p‐type multicrystalline silicon (mi‐Si) wafers through acid‐based chemical texturization. Achieving lower reflectance is crucial for improving solar cell efficiency, and this can be attained through optimized chemical etching. The research demonstrates achieving a reflectance below 2% on the wafer surface after optimal chemical etching. Wet chemical etching is employed as the surface treatment method, using the same chemical etchant with varying conditions for the texturing process. The study compares temperature‐maintained chemical etching and without temperature maintenance. The chemicals used include HF + HNO3 + CH3COOH at temperatures of 50 °C and room temperature, with etching durations of 2, 5, 10, and 15 minutes, respectively. The as‐cut boron‐doped p‐type mc‐Si wafer grains are analyzed using UV‐vis spectroscopy, optical microscopy, Fourier transform infrared spectroscopy, thickness profilometry, scanning electron microscopy, and X‐ray diffraction spectroscopy, both before and after etching. Among the different conditions tested, the chemical etchant HF + HNO3 + CH3COOH at 50 °C for a 5‐minute etching duration yields favorable results, with reflectivity below 2%. The orientation of mc‐silicon wafer grains is determined using X‐ray diffraction spectroscopy.

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Section: Introductionmentioning

confidence: 99%

“…through modifications made to the furnace geometry. [ 7–9 ] Extensive research has been conducted by Sugunraj et al. to investigate the grain structure and impurity concentrations within mc‐Si [ 10 ] and by Madhesh et al.…”

Section: Introductionmentioning

confidence: 99%

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

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Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation

Keerthivasan

Chen

Sugunraj

et al. 2022

Silicon

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Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling

Cited by 8 publications

References 15 publications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

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