Effect of palladium on copper aluminide intermetallic growth in palladium copper bonding wire

Yeung, Johnny; Xu, Huining; Chew, Effie

doi:10.1109/icept-hdp.2012.6474631

Cited by 7 publications

(2 citation statements)

References 7 publications

(7 reference statements)

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“…Heraues wire vendor compares Pd distribution in both Pd-doped and Pd-coated Cu wires and found uniform Pd distribution is observed within RelCu Free Air Ball (FAB) on melting the wire [23]. Hui X et al [24,25] reported when a Pd coated copper wire is being heated and melted to form a FAB, the Pd layer does not completely dissolve into copper ball to form a total solid solution according to solid solubility of the two metals. This is because in actual melting process of the wire, the duration of heating is too short to allow complete dissolution of Pd into copper core material before cooling and the solidification rate is too fast in the FAB formation process due to the short electric flame off (EFO) firing time to melt the tip of wire and the use of process gas such as nitrogen/hydrogen (95%/5%) mixture or pure nitrogen to protect the ball from oxidation before bonding onto the IC pad.…”

Section: Discussionmentioning

confidence: 99%

Correction: Comparative Reliability Studies and Analysis of Au, Pd-Coated Cu and Pd-Doped Cu Wire in Microelectronics Packaging

Leong¹,

Hashim²

2014

PLoS ONE

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This paper compares and discusses the wearout reliability and analysis of Gold (Au), Palladium (Pd) coated Cu and Pd-doped Cu wires used in fineline Ball Grid Array (BGA) package. Intermetallic compound (IMC) thickness measurement has been carried out to estimate the coefficient of diffusion (D o ) under various aging conditions of different bonding wires. Wire pull and ball bond shear strengths have been analyzed and we found smaller variation in Pd-doped Cu wire compared to Au and Pd-doped Cu wire. Au bonds were identified to have faster IMC formation, compared to slower IMC growth of Cu. The obtained weibull slope, b of three bonding wires are greater than 1.0 and belong to wearout reliability data point. Pd-doped Cu wire exhibits larger time-to-failure and cycles-to-failure in both wearout reliability tests in Highly Accelerated Temperature and Humidity (HAST) and Temperature Cycling (TC) tests. This proves Pd-doped Cu wire has a greater potential and higher reliability margin compared to Au and Pd-coated Cu wires.

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Section: Discussionmentioning

confidence: 99%

Correction: Comparative Reliability Studies and Analysis of Au, Pd-Coated Cu and Pd-Doped Cu Wire in Microelectronics Packaging

Leong¹,

Hashim²

2014

PLoS ONE

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“…Lim et al [ 40 ] found that the heat energy generated by EFO sparks is mostly used to provide the melting of Cu wire, Pd will not completely melt, Pd and Cu will form a solid solution, but will not form a uniform solid solution. Yeung et al [ 45 ] found that in the actual melting process of PdCu wire, the heating duration is too short, and Pd cannot be completely dissolved into the Cu matrix before FAB cooling. According to the solid solubility of the two metals, Pd and Cu can form a solid solution, but will not form a total solid solution.…”

Section: The Distribution Of Pd In Fab and Bonding Interfacementioning

confidence: 99%

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Zhang,

Guo,

Cao

et al. 2023

Micromachines

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Wire-bonding technology is the most commonly used chip interconnection technology in microelectronic packaging. Metal bonding wire is the key material for wire bonding and plays an important role in the reliability of electronic devices. In recent years, palladium-plated copper (PdCu) bonding wire has been widely used because of its low cost, good electrical and thermal conductivity, the fact that it is not easy to oxidize, and its high reliability. Therefore, it is necessary to review its research progress. In this paper, the preparation and application of palladium-plated copper bonding wire are reviewed. Firstly, the preparation methods of electroplating, electroless plating, and direct plating are introduced. Secondly, the factors affecting the distribution of Pd in free air balls and bonding interfaces, the effect of Pd on the formation and growth of intermetallic compounds in PdCu wire, stitch bond, and reliability of PdCu wire are summarized and analyzed in the application process. Finally, its development prospect is prospected. Hopefully, this review can help readers to have a comprehensive understanding of the preparation and application of palladium-plated copper bonding wires, and can accelerate the promotion of its application in more fields in the future.

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A solid-state bonding technique of large copper wires for high power devices operating at high temperature

Lee

2015

J Mater Sci: Mater Electron

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Solid-state processes of bonding 1 mm copper (Cu) wires on Cu substrates and silicon (Si) chips, respectively, were developed. To overcome Cu oxidation issue, the bonding surface on the wire was plated a silver (Ag) layer. An annealing step followed to make the Ag layer much easier to deform and conform to the Cu or Si bonding surfaces. The bonding process was performed at 300°C with 6.89 MPa. Wire-bond cross sections were studied using optical and electron microscopy, respectively. The images obtained exhibit nearly perfect Ag-Cu bonding interface. For wire-bonds made on Cu substrate, in-plane (shear) pull test measured a breaking of force 20.7-23.7 kg, comparable to the 22.5 kg breaking force of the Cu wire itself. Breaking forces on vertical (peel) pull test are about one-half of in-plane pull test results. For wire-bonds made on Si chip, breaking forces are about 80 % of those made on Cu substrate. Fracture modes were evaluated in details. 90 % of the wire-bonds broke with three modes mixed together: near Cu-Ag plating interface, inside Ag layer, and Ag-Cu bonding interface. Thus, the bonding interface is as strong as other regions of the wirebond. This solid-state wire bonding process is expected to have valuable applications in high power and high temperature devices and modules where the wire-bonds have to stand alone without protection due to lack of high temperature molding compound and reinforcing materials.

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Effect of palladium on copper aluminide intermetallic growth in palladium copper bonding wire

Abstract: The reliability of copper bonding wire in plastic mold package has been associated with the intermetallic compound formation and growth in the presence of halogen element such as chloride in epoxy molding compound.

Cited by 7 publications

References 7 publications

Correction: Comparative Reliability Studies and Analysis of Au, Pd-Coated Cu and Pd-Doped Cu Wire in Microelectronics Packaging

Correction: Comparative Reliability Studies and Analysis of Au, Pd-Coated Cu and Pd-Doped Cu Wire in Microelectronics Packaging

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

A solid-state bonding technique of large copper wires for high power devices operating at high temperature

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