Effect of oxygen vacancies on dielectric properties of Ba(1-x)Nd(2x/3)TiO3 compounds

Analysis of the electrical transport, conductivity, and dielectric relaxation behavior of La0.75 Ba0.10 Sr0.15 Fe O2.875-δ (δ = 0.375 and 0.50) brownmillerite oxides

“…This nding can be assigned to the bigger charge than that of an electron. In other words, oxygen vacancies motion is the main responsible factor for conduction at high temperature [43,44]. Relying upon other reports [45], the E a of oxygen vacancy is around 1 eV.…”

Structural, electrical, and dielectric study of the influence of 3.4% lanthanide (Ln3+ = Sm3+ and La3+) insertion in the A-site of perovskite Ba0.95Ln0.034Ti0.99Zr0.01O3

“…99), lattice parameters and atomic positions of each atom. 61 In this model, Ba/Ln is placed at site 1a (1/2, 1/2, z ); while Ti/Zr atoms occupy site 1b (0, 0, z ). As already known in the BaTiO 3 structure, there are two crystallographically distinct oxygen atoms 1c (1/2, 0, z ) and 1d (0, 0, z ) occupied by O1 and O2, respectively.…”

Evaluation of the microstructure, optical properties and hopping conduction mechanism of rare earth doped Ba0.85Ca0.12RE0.03Ti0.90Zr0.04Nb0.042O3 ceramics (RE = Ce3+ and Pr3+)

“…[18][19][20] The XRD obtained for BCRETZN (RE ¼ Pr, Ce) samples are quite similar for undoped BaTiO 3 . 21 However, the rened occupancy factors suggest that the obtained stoichiometries present only small differences with the expected ones.…”