Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates

Shen, Hong; Gao, Yan-Hong; Zhou, Peng; Ma, Jin; Sun, Jie; Meng, Xiangjian; Chu, Junhao

doi:10.1063/1.3076893

Cited by 7 publications

(6 citation statements)

References 17 publications

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“…[11][12][13][14] Each of these methods has its advantages, but also limitations. MOD and MOCVD methods are excellent for controlling the composition of the BST film; however, the deposited films suffer from lack of thickness uniformity, sufficient purity, and low film density.…”

Section: Introductionmentioning

confidence: 99%

Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

Alema

Reinholz

Pokhodnya

2013

Journal of Applied Physics

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Articles you may be interested inEffect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films Dielectric properties and microstructure of nano-MgO dispersed Ba 0.3 Sr 0.7 Ti O 3 thin films prepared by sputter deposition Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO 3 thin films prepared by radio-frequency magnetron sputteringThe systematic study of the oxygen partial pressure (OPP) and total chamber gas pressure (TGP) effects on the stoichiometry and crystal structure of rf sputtered Ba 0.45 Sr 0.55 TiO 3 (BST) films and their phase purity allowed identifying close to optimal sputtering parameters for BST single phase polycrystalline film. The film with a Ba/Sr ratio equal to that of the source target and (Ba þ Sr)/Ti ratio close to unity demonstrated the enhanced permittivity value of 553 and tunability of 69%. It was confirmed that the increase of TGP enables better match of the film and target stoichiometry. However, using O 2 /Ar ratio as a parameter should be utilized cautiously since exceeding a threshold OPP (2 mTorr in our case) may facilitate secondary phase formation. Relatively large dielectric losses were observed in both films sputtered at high (30 mTorr) and low (5 mTor) TGPs. The presence of oxygen vacancies was identified as a probable cause of losses, which is indirectly confirmed by the deviation of the film lattice constant from that of the bulk target. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

Alema

Reinholz

Pokhodnya

2013

Journal of Applied Physics

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“…2) a slight shift of the diffraction peaks to higher diffraction angles can be observed for the doped films. The EPR results shown in oxygen vacancies necessary for charge compensation will also result in an increased lattice parameter as Shen et al [28] and Kim et al [29] pointed out. Concerning this opposite trend, we think that the variation of the lattice parameter might be ascribed to the slight difference in crystallization behaviour, which leads to a higher amount of amorphous material in the iron-doped BST thin films as can be seen from the increased background at 26°-30°2h in the diffraction patterns.…”

Section: Resultsmentioning

confidence: 83%

Effects of thermal processing and iron doping in co-sputtered barium strontium titanate thin films

et al. 2012

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The effects of the thermal processing and iron doping on RF magnetron co-sputtered barium strontium titanate thin film properties have been investigated. X-ray diffraction and Raman spectroscopy have been used to determine the structural evolution of the films as a function of the annealing temperature and the amount of iron dopant. X-ray photoelectron spectroscopy and electron paramagnetic resonance spectroscopy were employed to gain information about the chemical binding states and the defect structure. The enhancement of the quality factor Q, as well as the decreasing permittivity and tunability due to iron acceptor doping are demonstrated.

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“…The effect of post-deposition annealing on n are presented in Fig. 7(b) for films deposited at 0.67 and 1.33 Pa. n values increased with annealing from 1.96 to 2.00 for the film deposited at 0.67 Pa, and from 1.90 to 1.98 for the film deposited 0.93 Pa, while a significant increase from 1.90 to 2.07 was observed for film deposited at 1.33 Pa. Refractive index, n of an oxide thin film might be directly correlated to its packing density and microstructure [8,9,35,36]. It should be noted that in the present case, amorphous films (as-deposited) exhibited lower refractive indices indicating less dense films; while the post-deposition annealing lead to denser films, resulting with an increase in the refractive index due to crystallization.…”

Section: Optical Propertiesmentioning

confidence: 97%

“…Several techniques such as radio frequency (rf) sputtering, laser ablation, chemical vapour deposition (CVD), pulsed laser deposition, molecular beam epitaxy, and sol-gel have been used to deposit BST thin films [9][10][11][12][13][14][15][16][17][18]. Each of these techniques has its own advantages and disadvantages in terms of film properties, process cost, and process compatibility for device applications.…”

Section: Introductionmentioning

confidence: 99%

“…It is well known that film characteristics are strongly affected by the growth parameters such as substrate temperature, oxygen pressure and annealing [7,9,10,19]. Numerous studies on BST thin films have been reported in the recent years, however these efforts mainly concentrated on the determination of a single physical property (i.e., either the structural, optical, or electrical properties) [18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

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Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing

Bayrak

Özgit-Akgün

Goldenberg

2017

Journal of Non-Crystalline Solids

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Among perovskite oxide materials, BaSrTiO x (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was~85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90-2.07 (λ = 550 nm). Post-deposition annealing at 800°C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46-72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.

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Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates

Cited by 7 publications

References 17 publications

Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

Effects of thermal processing and iron doping in co-sputtered barium strontium titanate thin films

Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing

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