Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing

Abstract

Coupled theoretical and computational work is presented aimed at understanding and modelling stimulated Raman backscattering (SRBS) relevant to laser-plasma interactions in large-scale, homogeneous plasmas. With the aid of a new code for simulating and studying the nonlinear coupling in space-time of a large number of modes, and an Eulerian Vlasov-Maxwell code for studying the evolution of large amplitude electron plasma waves, we report results and their interpretations to elucidate the following five observed, nonlinear phenomena associated with SRBS: coupling of SRBS to Langmuir decay instabilities (LDIs); effect of ion-acoustic damping on SRBS; cascading of LDI; stimulated Raman scattering cascades; and stimulated electron acoustic wave scattering (SEAS).

Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism

“…$200 nm) [9] can immobilize dislocations, thus resulting in the improvement of mechanical strength of Cz silicon. The dislocation immobilization depends strongly on both the size and density of oxygen precipitates [3,4,10]. The immobilization effect becomes stronger with increasing density at comparable oxygen precipitate sizes.…”

Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals

“…In particular, for semiconductor devices that require complicated structural enhancements such as scaling and three-dimensional chip integration, new technology for controlling oxygen precipitates will gain more significance, specifically because endurance against the stress induced in Si wafers during device fabrication is becoming increasingly crucial. [4][5][6] The behavior of oxygen precipitates in Cz-Si crystals is closely related to point defects such as vacancies and interstitial Si atoms. [7][8][9] Vacancies promote the formation of oxygen precipitates because their nucleus is formed as a complex between oxygen atoms (O) and vacancies (Va); for instance, in the form of O 2 Va.…”

Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

“…This can be done by a gettering zone below the device active zone at depths >5 μm . Oxygen precipitates can also stabilize the Si wafer against overlay induced by thermal stress as it increases the rigidity by inhibiting the movement of dislocations . Defects in the near surface zone <3 μm can, for example, increase leakage currents, distort device structures, and yield high chip losses on modern design rules ≤20 nm .…”

“…[4,5] Oxygen precipitates can also stabilize the Si wafer against overlay induced by thermal stress as it increases the rigidity by inhibiting the movement of dislocations. [6] Defects in the near surface zone <3 μm can, for example, increase leakage currents, distort device structures, and yield high chip losses on modern design rules ≤20 nm. [1] A process-related source might be a slip which is introduced by the rapid thermal annealing (RTA) process itself and acts as a fast diffusing channel for metal contaminations.…”