Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3

Structural and electrical properties of Nb/NbN gates on HfO2 gate dielectrics

“…Metal nitrides used for metal gate applications have been widely investigated because of their good thermal stability, good characteristics of their oxygen diffusion barrier, and tunable work functions [8][9][10][11][12][13][14][15].…”

Effect of Nitrogen on the Physical Properties and Work Function of MoNxCap Layers on HfO2Gate Dielectrics

“…10 The metal nitrides have been widely investigated for metal gate applications because of their good thermal stability, good oxygen diffusion barrier characteristics, and tunable work function. [11][12][13][14][15][16][17][18] The work function of metal nitrides can be modified by the nitrogen content. However, the work function tuning is limited, since most metal nitrides exhibit high resistivity when the nitrogen content is high.…”