Incorporation of foreign chemical elements in oxides can significantly alter their optoelectronic performances, and thus it is widely used to seek new transparent conductive oxides. Chemical-doping BaSnO 3 systems, like La-doped BaSnO 3 , are of increasing interest with extremely high electrical mobility and excellent oxygen stability, exhibiting the potential application in next-generation all-perovskite optoelectronic devices. In this work, hydrogen was introduced into BaSnO 3 through CaH 2 reduction of BaSnO 3 thin films, and the electrical properties, as well as the photo-response behavior, were investigated. Secondary ion mass spectroscopy demonstrated the uniform distribution of hydrogen within the BaSnO 3 thin film. The addition of hydrogen greatly enhanced the conductivity of the BaSnO 3 thin film, exhibiting a carrier concentration $8.04 Â 10 19 cm À3 and mobility $9.52 cm 2 V À1 s À1 at 300 K, and thus resulted in a fast relaxation process in the transient photoconductivity, which was characterized by a double exponential function indicating two physical contributions.