2000
DOI: 10.1103/physrevb.61.8262
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Effect of oxygen on transient photoconductivity in thin-filmNbxTi1x

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Cited by 35 publications
(44 citation statements)
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“…This phenomenon is observed only when UV-light is cut off, implying that TiO 2 is the origin, while this observation cannot be considered merely as photoconductivity. [20] A similar phenomenon is observed for a P3HT:PC 70 BM single cell with UT-Al/TiO 2 /PEDOT4083/Al as the cathode, as shown in Figure 3a and b. It can be seen that inserting PEDOT4083 between the TiO 2 layer and the Al cathode has a negligible influence on the J-V characteristics.…”
Section: à2supporting
confidence: 76%
“…This phenomenon is observed only when UV-light is cut off, implying that TiO 2 is the origin, while this observation cannot be considered merely as photoconductivity. [20] A similar phenomenon is observed for a P3HT:PC 70 BM single cell with UT-Al/TiO 2 /PEDOT4083/Al as the cathode, as shown in Figure 3a and b. It can be seen that inserting PEDOT4083 between the TiO 2 layer and the Al cathode has a negligible influence on the J-V characteristics.…”
Section: à2supporting
confidence: 76%
“…As it can be observed, the p values in air are several orders of magnitude lower than those in vacuum. The decrease is attributed to the shortening of the electron lifetime in air caused by the surface adsorbed oxygen gas molecules and the creation of a great number of electron scavengers O − 2 [58]. For the thermal treatment temperature of 400 • C [ Fig.…”
Section: In Vacuummentioning
confidence: 99%
“…Through photoHall measurements, previous investigations demonstrated that the increased carrier concentration is the determination of the contribution to the photoconductivity in oxide thin lms (WO 3 and Ti 1Àx Nb x O 2 ). 38,39 In present case, the short photo response time of BSO-H thin lm is beyond the time resolution of our photo-Hall measurement, and thus it is hard to briey verify that the variable resistance is due to carrier concentration or mobility or both. However, considering the weak temperature-dependent carrier concentration in BSO-H thin lm (see Fig.…”
mentioning
confidence: 99%
“…However, considering the weak temperature-dependent carrier concentration in BSO-H thin lm (see Fig. 3(b)), it is reasonable to assume that the change of resistances under illumination is still involved with the increased carrier concentration like the Ti 1Àx Nb x O 2 thin lms, 39 although the deep mechanisms need to be investigated further.…”
mentioning
confidence: 99%