Effect of oxygen on the scale resistance of titanium-tin alloys

Kenina, E. M.; Kornilov, I.I.; Vavilova, V. V.

doi:10.1007/bf00649818

Cited by 8 publications

(4 citation statements)

References 1 publication

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“…[23] These behaviors are thought to occur because of vacancies created by the diffusion of Sn to the interface; these vacancies facilitate the diffusion of Ti, thereby enhancing the formation of TiO 2 .…”

Section: Resultsmentioning

confidence: 99%

“…Sn segregated in the substrate near the TiO 2 /substrate interface, as shown in Figures 7(a) and (b); this segregation can deteriorate the adherence of oxides at the interface, as reported for Sn-added a-Ti and a-b alloys. [22,23] For all the alloys oxidized at 973 K (700°C), TiO 2 formed internally and Al was enriched at the external Al 2 O 3 layer. Several Al peaks were observed in the TiO 2 regions of the concentration profiles of Sn-added TKT8 and TKT9 in Figure 7, indicating the formation of alternating layers of Al 2 O 3 and TiO 2 .…”

Section: Resultsmentioning

confidence: 99%

“…In the oxidation process of near-a Ti alloys, external Al 2 O 3 and internal TiO 2 form on the surface; the oxidation kinetics are essentially dominated by TiO 2 formation. [21] Sn degrades the oxidation resistance, forming a metallic layer at the oxide/substrate interface [23] ; this metallic layer could deteriorate the adherence of oxides on surface. However, the literature contains few studies on the effect of Ga on the oxidation resistance of Ti alloys.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Ga and Sn Additions on the Creep Strength and Oxidation Resistance of Near-α Ti Alloys

Kitashima

Yamabe‐Mitarai

Iwasaki

et al. 2016

Metall Mater Trans A

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The effects of Ga and Sn additions, with an almost constant value regarding Al equivalence, on the creep properties and oxidation resistance of the near-a Ti alloy Ti-5Al-4Zr-1Mo were investigated. The creep strain rate increased due to the replacement of Sn with Ga, which was accompanied by an increase in the volume fraction of primary equiaxed a phase. In addition, the replacement of Sn with Ga decreased the activation energy of the steady-state creep rate for the similar volume fraction of the equiaxed a phase. Ga addition improved the oxidation resistance without Ga segregation at the TiO 2 /substrate interface, whereas Sn promoted oxide spallation with metallic Sn segregation at the interface. Ga uniformly dissolved into the internal TiO 2 and into the external Al 2 O 3 as a result of solid solution formation between Ga 2 O 3 and the aforementioned oxides, which suppressed oxide growth. The formation of (GaAl) 2 TiO 5 in TiO 2 and Al 2 O 3 was also discussed on the basis of the phase relationships in the TiO 2 -Al 2 O 3 -Ga 2 O 3 system.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of Ga and Sn Additions on the Creep Strength and Oxidation Resistance of Near-α Ti Alloys

Kitashima

Yamabe‐Mitarai

Iwasaki

et al. 2016

Metall Mater Trans A

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“…Hence, a small amount of Al decreases the oxidation resistance of TA29 alloy. As for the segregation of Sn at the oxide-substrate interface, on the one hand, it increases the vacancy concentration in the alloy, promoting the diffusion of Ti atoms in the alloy; on the other hand, it reduces the adhesion between the oxide scale and the substrate, prompting the oxide scale to peel off [38,39,40]. Both intensify the reaction between Ti and O and decrease the oxidation resistance of the alloy, thus Sn is detrimental to the oxidation resistance of TA29 alloy.…”

Section: Discussionmentioning

confidence: 99%

Non-Isothermal Oxidation Behavior and Mechanism of a High Temperature Near-α Titanium Alloy

Ouyang

et al. 2018

Materials

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Non-isothermal oxidation is one of the important issues related to the safe application of high-temperature titanium alloys, so this study focuses on the non-isothermal oxidation behavior and mechanism of near-α titanium alloys. The thermogravimetry-differential scanning calorimetry (TGA/DSC) method was used to study the non-isothermal oxidation behavior of TA29 titanium alloy heated from room temperature to 1450 °C at a heating rate of 40 °C/min under pure oxygen atmosphere. The results show that non-isothermal oxidation behavior can be divided into five stages, including no oxidation, slow oxidation, accelerated oxidation, severe oxidation and deceleration oxidation; for the three-layer TiO2 scale, Zr, Nb, Ta are enriched in the intermediate layer, while Al is rich in the inner layer and Sn is segregated at the oxide-substrate interface, which is related to their diffusion rates in the subsurface α case. The oxidation mechanism for each stage is: oxygen barrier effect of a thin compact oxide film; oxygen dissolution; lattice transformation accelerating the dissolution and diffusion of oxygen; oxide formation; oxygen barrier effect of recrystallization and sintering microstructure in outer oxide scale. The alloying elements with high valence state and high diffusion rate in α-Ti are favorable to slow down the oxidation rate at the stage governed by oxide formation.

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Effects of Alloying Elements on the Tensile and Oxidation Properties of Alpha And Near‐Alpha Ti Alloys

Kitashima

Yamabe‐Mtarai

Iwasaki

et al. 2016

Proceedings of the 13th World Conference on Titanium

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Effect of oxygen on the scale resistance of titanium-tin alloys

Cited by 8 publications

References 1 publication

Effects of Ga and Sn Additions on the Creep Strength and Oxidation Resistance of Near-α Ti Alloys

Effects of Ga and Sn Additions on the Creep Strength and Oxidation Resistance of Near-α Ti Alloys

Non-Isothermal Oxidation Behavior and Mechanism of a High Temperature Near-α Titanium Alloy

Effects of Alloying Elements on the Tensile and Oxidation Properties of Alpha And Near‐Alpha Ti Alloys

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