“…The C 1s peaks of the as-deposited specimen can be distinguished by three peaks, which were observed at 282.5, 284.08, and 286.48 eV correspond to the existence of SiC, SiOxCy, and surface absorption impurity(C-O/C-H), respectively. 24,25 After 3 days of corrosion, the peak belonging to the C-O-Si bond of SiOxCy centered at 284.08 eV disappeared while a new peak was formed at 284.6 eV, which can be attributed to the C-C bond of carbon. The results suggested the formation of a carbon-rich surface due to the loss of Si from the SiC layer, which is consistent with the Raman analyses.…”