Effect of oxygen on the surface morphology of CuGaS2 thin films

Smaïli, F.; Kanzari, M.

doi:10.1016/j.msec.2009.03.013

Cited by 8 publications

(4 citation statements)

References 12 publications

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“…8 Meanwhile, it possesses a bandgap close to the optimum for the realization of a thin-film intermediate-band solar cell (IBSC), theoretically able to reach value of energy conversion efficiency above 46% under sun irradiation. 9 Numerous approaches developed for the fabrication of CuGaS 2 , such as metal-organic chemical vapor deposition, 10 modulated flux deposition, 11 vacuum evaporation 12,13 and molecular beam epitaxy, 14 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers lowcost equipment, efficient material utilization and scalability for largescale deposition, and has widely been employed for the deposition of elemental, binary, ternary or even more complex compound thin films.…”

mentioning

confidence: 99%

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Wang

Yang

et al. 2013

J. Electrochem. Soc.

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A novel technique for synthesis of CuGaS 2 solar energy thin film is presented. It is associated with double pulse electrodeposition of Cu-Ga precursor layer followed by thermal annealing treatment in sulfur atmosphere. The influence of several flexible parameters including pulse deposition potential and agitation rate on the compositions, crystal structure and morphology of the films were investigated. A relative negative shift of the higher pulse deposition potential results in the increasement of Ga content. A higher agitation rate results in higher Cu/Ga ratio and the emergence of CuS secondary phase after annealing in sulfur atmosphere. The crystal size increases with decreasing the higher pulse deposition potential. Several characterization methods including X-ray diffraction (XRD), scanning electron microscope (SEM), energy diffraction spectrum (EDS), ultraviolet-visible (UV-vis) spectra, impedance spectroscopy, and Raman spectrum are used to characterize the synthesized CuGaS 2 polycrystalline thin films. Based on the experimental results, a probable formation mechanism of the CuGaS 2 thin films was proposed and briefly discussed.The broad bandgap and high absorption coefficient offered by the chalcopyrite semiconductor materials make them attracting considerable attention on application in photovoltaic solar cells, 1 light emitting diodes, 2 hydrogen production, 3 and various nonlinear optical devices. 4 Solar cells based on polycrystalline Cu(In,Ga)Se 2 absorber layers have demonstrated the highest power conversion efficiencies of up to 20.3% in laboratory among the thin film technology. 5 However, a toxic selenium gas treatment limited large scale production. Many studies were presently focused on the exploration of chalcogenide compounds Cu(In,Ga)S 2 based solar cells which have reached a limited efficiency of below 13%. 6 For a further promotion on conversion efficiency, tandem solar cell structures are currently subject of intensive research. The ternary compound CuGaS 2 as a member of the chalcopyrite family has a bandgap energy (Eg) of around 2.45 eV and has been considered as a promising material for high efficiency tandem solar cells. 7 It also bears perspectives as a Cd-free window material for Cu(In 1−x Ga x )Se 2 type solar cell. 8 Meanwhile, it possesses a bandgap close to the optimum for the realization of a thin-film intermediate-band solar cell (IBSC), theoretically able to reach value of energy conversion efficiency above 46% under sun irradiation. 9 Numerous approaches developed for the fabrication of CuGaS 2 , such as metal-organic chemical vapor deposition, 10 modulated flux deposition, 11 vacuum evaporation 12,13 and molecular beam epitaxy, 14 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers lowcost equipment, efficient material utilization and scalability for largescale deposition, and has widely been employed for the deposition of elemental, binary, ternary or even more complex compound thin films....

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mentioning

confidence: 99%

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Wang

Yang

et al. 2013

J. Electrochem. Soc.

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“…The PL spectrum of CGS. (a) Crystals fabricated by Bridgman method, (b) crystals fabricated by chemical transport in I2 ambiance, (c) layers fabricated by flash evaporation .…”

Section: Resultsmentioning

confidence: 99%

“…Concerning that in the production stage of thin CGS films as absorber of solar cell, smaller size nanoparticles result in higher quality thin CGS films, the nanoparticles produced by annealing regime of 180 °C for 12 h, then 230 °C for 12 h (sample 5) are of excellence for solar cell applications. It is worth noting that despite of large bang gap of the produced nanoparticles which is beyond the desired band gap for solar cell applications, this amount reduces to the required value by applying proper annealing procedures in the thin film production stage .…”

Section: Resultsmentioning

confidence: 99%

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method

Zahedifar

Ghanbari

Moradi

et al. 2014

Phys. Status Solidi A

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The single phase CGS nanoparticles were synthesized by solvothermal method. The optimal annealing regime of synthesis stage was determined as 180 °C for 12 h followed by an extra annealing at 230 °C for 12 h. The phase improvements were studied using X‐ray diffraction (XRD) patterns. Grain size ranging from 20–50 nm was obtained by SEM and TEM images and confirmed by Scherrer's formula. Band gap of 2.48 eV and a broad PL spectrum peaking at 3.16 eV were resulted respectively from studies on UV‐Visible absorption and photoluminescence (PL) patterns of the synthesized nanoparticles.

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“…Numerous approaches developed for the fabrication of CuGaS 2 thin film, such as metal-organic chemical vapor deposition, 8,9 modulated flux deposition, 10 vacuum evaporation 11 and molecular beam epitaxy, 12 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers low-cost equipment, efficient material utilization and scalability for large-scale deposition, and has widely been employed for the z E-mail: syang@xtu.edu.cn deposition of elemental, binary, ternary or even more complex compound thin films.…”

mentioning

confidence: 99%

Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS₂Solar Energy Thin Film

Niu¹,

Yang²,

Li³

et al. 2014

J. Electrochem. Soc.

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CuGaS2 solar energy thin film is fabricated with electrochemical deposition of precursor from deep eutectic solvent (DES) based on choline chloride and urea (commercially known as Reline) to eliminate the interference of hydrogen evolution reaction (HER). The process involves electrodeposition of Cu-Ga precursor on molybdenum substrate from Reline and subsequential annealing in sulfur vapor. The formation of CuGa2 alloy in precursor is observed and pure ternary chalcopyrite CuGaS2 phase in good polycrystalline structure without secondary phase is obtained after thermal treatment. The influence of applied deposition potential on the crystalline phase, morphology, compositions and carrier concentration of the films were investigated. The Cu/Ga ratio decreases with decreasing the deposition potential benefiting the formation of a pure crystallized CuGaS2 thin film. A relative positive deposition potential results in a larger crystalline size benefitting the photoelectrical conversion. Impedance spectroscopy test demonstrates the semiconductor property of the synthesized CuGaS2 polycrystalline thin film is p-type and the carrier concentration increases with negative shift of deposition potential.

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Effect of oxygen on the surface morphology of CuGaS2 thin films

Cited by 8 publications

References 12 publications

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method

Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS₂Solar Energy Thin Film

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Effect of oxygen on the surface morphology of CuGaS2 thin films

Cited by 8 publications

References 12 publications

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

Optimized annealing regime of CuGaSe2nanoparticles prepared by solvothermal method

Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2Solar Energy Thin Film

Contact Info

Product

Resources

About

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method

Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS₂Solar Energy Thin Film