Effect of Oxygen Ions on Plasma Oxidation of Silicon.

Kamioka, I.; Kitajima, Masahiro; Kawabe, T.; Nakamura, Kazutaka G.; Hishita, Shunichi

doi:10.1380/jsssj.16.504

Cited by 4 publications

(4 citation statements)

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“…If one compares the film thickness obtained under the condition of plasma only ›, in which the oxygen plasma is irradiated onto the silicon substrate with no bias, with that under the condition of V dc ¼ þ20 V as well as V pp ¼ 20 V fl, it is seen that the film thickness under the condition › is more than one order less than that under the condition fl, indicating that the contribution of oxygen radicals to oxidation may be negligible. If one further compares the film thickness under the condition of V dc ¼ À20 V as well as V pp ¼ 20 V fi with that under the condition of V dc ¼ þ20 V as well as V pp ¼ 20 V fl, it is seen that the positive bias is very effective for oxidation, and this is the fact that many authors [12][13][14][15][16][17][18][19] have pointed out so far. From the experimental data shown in Fig.…”

Section: Oxidation Rates As a Function Of Axial Distancementioning

confidence: 91%

“…The plasma oxidation technique of flat silicon has been investigated so far by many authors, with electron cyclotron resonance (ECR) 12,13) oxygen plasma, inductively coupled plasma (ICP) [14][15][16][17][18][19][20][21] oxygen plasma, and other plasma sources. [22][23][24] It has been shown that positive DC bias to the silicon substrate is effective in promoting silicon oxidation.…”

Section: Introductionmentioning

confidence: 99%

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Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma

Takahashi¹,

Shindo

2011

Jpn. J. Appl. Phys.

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For one application of nonequilibrium oxygen plasma, low-temperature silicon trench oxidation is examined under the conditions of radio frequency bias as well as DC bias applications. The silicon oxidation has a very strong dependence on the substrate bias and is drastically reduced under the condition of no bias. The oxidation depth shows a maximum in a far downstream position from the microwave window. The silicon trench oxidation mapping clearly demonstrates that the maximum depth occurs along the line of the substrate bias of +20 V just above the plasma potential. In particular, silicon trench bottom oxidation is limited to higher radio frequency bias under the above conditions. It is concluded, for the reasons above, that the oxidation is due to the negative oxygen ions in downstream.

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Section: Oxidation Rates As a Function Of Axial Distancementioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma

Takahashi¹,

Shindo

2011

Jpn. J. Appl. Phys.

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“…The plasma oxidation of silicon has so far been investigated by many authors [12][13][14][15][16][17][18][19][20][21][22] ; it is found that the oxidant species responsible for oxidation in thick film are negative oxygen ions O − . The negative oxygen ion O − , which is produced in an interface of silicon dioxide with plasma, is diffused in the silicon dioxide film and comes onto the silicon surface and reacts with a silicon atom to grow a silicon dioxide film.…”

Section: Oxidation Mechanismmentioning

confidence: 99%

“…The plasma oxidation technique of flat silicon has been investigated by many authors, with ECR 12,13) oxygen plasma, ICP [14][15][16][17][18][19][20][21] oxygen plasma, and other plasma sources. [22][23][24][25][26][27] It has been shown that positive DC bias to the silicon substrate is effective in promoting silicon oxidation.…”

Section: Introductionmentioning

confidence: 99%

Aspect ratio dependence of silicon trench oxidation in downstream of microwave oxygen plasma

Takahashi

Taniuchi

Utsumi

et al. 2019

Jpn. J. Appl. Phys.

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Silicon trench oxidation is studied in microwave oxygen plasma downstream under the conditions of radio frequency bias as well as DC bias applications. Particularly, an aspect ratio dependence of trench oxidation is precisely examined within its range from 1 to 5. It is shown that the oxidation film obtained at the trench bottom is drastically reduced at higher aspect ratios even in the bias condition in which the oxidation at the trench top shows a maximum. It is also demonstrated that the ratio of film thickness at the bottom to the top of the trench is consistent with oxygen radical fluxes coming onto the silicon dioxide film surface, indicating that the oxidation is ion-assisted but is radical flux-limited. This is because the oxidant species responsible for oxidation is O − which is formed on the surface by attachment with radicals or molecules and diffused in the silicon dioxide film. It is emphasized that the negative ions O − in plasma are also important in enhancing the oxidation by bombardment with their kinetic energy, while the positive ions are for neutralization of the charge, particularly at the bottom of trench.

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