Effect of oxygen incorporation in the Mg2Si lattice on its conductivity type – A possible reason of the p-type conductivity of postannealed Mg2Si thin film

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

“…So, Mg 2 Si exhibits a very weak p‐type conduction. This conclusion is consistent with other experimental results 19–21 . The p‐type origin of Mg 2 Si was related to Mg vacancy, the absence of the interstitial Mg or extrinsic defects such as interstitia O atoms introduced during the post annealing 22 …”

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg2Si and SiO2/Mg2Si heterojunctions

“…The intensity is in arbitrary units (a.u.) many high k dielectric materials to choose, it seems that MgO (k = 9.8) 11 and SiO 2 (k = 3.9) 12,13 should be given priority because MgO and SiO 2 are natural oxidizing layers on the surface of Mg 2 Si, [14][15][16] and normally, a native oxide would be useful for manufacturability and reliability. 17 If the heterojunction formed by the natural oxide layer and Mg 2 Si meets the required band offset, the effort to find other suitable dielectric materials can be reduced.…”

Recent Studies on the Environmentally Benign Alkaline-Earth Silicide Mg2Si for Middle-Temperature Thermoelectric Applications

“…It is necessary to improve the TE performance of Mg 2 Si for practical use as a TE conversion material. Thus, several theoretical and experimental studies have been reported [16][17][18][19][20][21][22][23][24][25][26][27][28][29]. In addition to Bi, which is one of the most important dopants in this system [30][31][32], previous studies have shown that Sb is also an efficient n-type dopant for improving ZT because doping Mg 2 Si with Sb increases σ and decreases κ l [33][34][35].…”