Effect of oxygen deficiency on optical band gap shift in Er-doped ZnO thin films

Chen, Y.; Xu, Xiaoli

doi:10.1016/j.physb.2011.03.078

Cited by 35 publications

(12 citation statements)

References 15 publications

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“…The deficiencies could tune the band structure and widen the band gap for the samples with x > 0.04. Similar phenomenon has been observed in CuIn 1‐ x Ga x Se 2 (increased Eg by Cu deficiencies) and Er‐doped ZnO (increased Eg by O deficiencies) . The variation in band structure has a comprehensive influence on the carrier transport properties.…”

Section: Resultssupporting

confidence: 73%

Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Tan

Lan

et al. 2018

J Am Ceram Soc

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N‐type Bi2O2Se has a bright prospect for mid‐temperature thermoelectric applications on account of the intrinsically low thermal conductivity. However, the low carrier concentration of Bi2O2Se (~1015 cm−3) severely limits its thermoelectric performance. Herein, the boosting of the carrier concentration to ~1019 cm−3 can be realized in our La‐doped Bi2O2Se ceramic samples, which could be ascribed to the formation of isoelectronic traps and the narrowing of band gap, and contribute to a marked increase in the electrical conductivity (from 0.03 S cm−1 to 182 S cm−1). Our X‐ray absorption near‐edge structure spectra results reveal that a local disordering of oxygen atoms could be an important reason for the intrinsically low thermal conductivity of Bi2O2Se, and the point defects can also suppress the lattice thermal conductivity in La‐doped Bi2O2Se. The ZT value can be enhanced by a factor of ~4.5 to 0.35 at 823 K for Bi1.98La0.02O2Se as compared to the pristine Bi2O2Se. The coordinated optimization of electrical and thermal properties demonstrates an effective method for the rational design of high‐performance thermoelectric materials.

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Section: Resultssupporting

confidence: 73%

Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Tan

Lan

et al. 2018

J Am Ceram Soc

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“…It is seen that more Cu content is introduced into the sample, the stronger tensile is, or more created compression stress is. It is known that [25,26]. The inherent reason for red shift in band edge in transition metal doped ZnO samples is due to the change of the sp-d exchange interaction between the band electrons and the localized d-electron of the Cu 2+ ions [27].…”

Section: Resultsmentioning

confidence: 99%

Co-Precipitation Synthesis and Characterization of Nanocrystalline Zinc Oxide Particles Doped with Cu<sup>2+</sup> Ions

Mukhtar¹,

Munisa²,

Saleh³

2012

MSA

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Nanocrystalline Cu-doped ZnO particles were synthesized by the co-precipitation method. The composition, structural, optical and magnetic characterizations were performed by energy dispersive X-Ray spectroscopy, X-Ray diffraction, UV-Visible spectrometer, and vibrating sample magnetometer. The results confirmed that nanocrystalline Cu-doped ZnO particles have a hexagonal wurtzite structure with a high degree of crystallization and a crystallite size of 10 -16 nm. For Cu above 11 at%, the X-Ray diffraction pattern possessed CuO secondary phase which shows the solubility limit of Cu in the ZnO lattice. Up to 11% at Cu, the presence of Cu in the ZnO lattice as Zn substitution indicated by an in-crease in lattice parameter values. Nanoparticles showed weak ferromagnetic characteristics at room temperature. The absence of secondary phase related to magnetic precipitate shown intrinsic ferromagnetic behaviour.

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“…Compared with the implanted sample spectra, the spectrum of asdeposited ZnO:Er has slight band edge emission and defect related emission, but higher 1.54-μm emission intensity. Several papers have reported that the ZnO crystallinity correlates with PL emission intensity, because ZnO can absorb excitation energy from pumping light and transfer energy to Er ions [35]. When the energy transfer has taken place, we can observe the reduction of the host emission followed by an increase of the Er emission.…”

Section: Resultsmentioning

confidence: 79%

Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation

et al. 2020

Mater. Res. Express

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Er-doped ZnO thin films on a SiO 2 /Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μm were investigated. In addition to the typical emission at 1.54 μm from Er 3+ , a new 1.16-μm emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16-and 1.54-μm luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn 2 SiO 4 and Er 2 Si 2 O 7 was also presented in this study. The 1.16-μm luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er 3+ . The intensity of Er 3+ related 1.54-μm PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition.

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Effect of oxygen deficiency on optical band gap shift in Er-doped ZnO thin films

Cited by 35 publications

References 15 publications

Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Co-Precipitation Synthesis and Characterization of Nanocrystalline Zinc Oxide Particles Doped with Cu<sup>2+</sup> Ions

Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation

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Effect of oxygen deficiency on optical band gap shift in Er-doped ZnO thin films

Cited by 35 publications

References 15 publications

Boosting the thermoelectric performance of Bi2O2Se by isovalent doping

Boosting the thermoelectric performance of Bi2O2Se by isovalent doping

Co-Precipitation Synthesis and Characterization of Nanocrystalline Zinc Oxide Particles Doped with Cu&lt;sup&gt;2+&lt;/sup&gt; Ions

Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation

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Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Boosting the thermoelectric performance of Bi₂O₂Se by isovalent doping

Co-Precipitation Synthesis and Characterization of Nanocrystalline Zinc Oxide Particles Doped with Cu<sup>2+</sup> Ions