Effect of oxygen contamination on the deposition of hydrogenated amorphous silicon films by tetrode radio frequency sputtering

Abstract

Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition Hydrogenated amorphous silicon films were deposited using the tetrode rf sputtering method by changing the hydrogen partial pressure ratio 5 to argon in atomospheric gas H2/ Ar, under the following conditions: one is the oxygen contaminated condition and the ether is the condition which prevents the oxygen contamination with gas filtration and Ar-plasma cleaning. The effect of oxygen incorporated in the films on the optical and electrical properties of deposited films was studied comparing the properties of the films deposited under both conditions. From the experimental results, we found that (1) in the dependence of the properties of the oxygen contamina ted films on ~e, an irreversible phase transition with respect to 5 observed at g > 10% is a phenomenon which is assisted by oxygen incorporated in the mms.(2) The strong infrared absorption at 650 cm 1 observed in the oxygen contaminated films is one of vibration mode of -Si-O-Si-H bonds formed by oxygen incorporated in the films.

Control of crystal growth and thermoelectric properties of sputter-deposited BiTe thin films embedded with alumina nanoparticles

“…Some crystals were vertically grown, which were also composed of layer-structured crystal plates. In Al (20), it was clearly observed that most crystals were vertically grown (Fig. 1(d)).…”

“…1(d)). The average thickness of Al (15) and Al (20) was drastically increased compared with that of Al(0) and Al (10). This may be due to the rough surface of Al(0) and Al (10) and/or the perpendicular growth of crystals in Al (15) and Al (20).…”

“…This may be due to the rough surface of Al(0) and Al (10) and/or the perpendicular growth of crystals in Al (15) and Al (20). Moreover, the average thickness of Al (20) was slightly lower than that of Al (15), which may be due to highdensity and vertical growth of crystals. In Fig.…”

“…5,6 Hence, BiTe, not Bi 2 Te 3 , can be formed by the evaporation of Te atoms at high deposition temperature. In addition, it is interesting that the main peak of Al(0) and Al (10) was different from that of Al (15) and Al (20). The intensity of the (005) crystalline plane was highest in Al(0) and Al (10), while that of the (104) crystalline plane in Al (15) and Al (20) was highest.…”

“…In addition, it is interesting that the main peak of Al(0) and Al (10) was different from that of Al (15) and Al (20). The intensity of the (005) crystalline plane was highest in Al(0) and Al (10), while that of the (104) crystalline plane in Al (15) and Al (20) was highest. This is related to the morphological change of films (Fig.…”