Effect of Oxygen Concentration on Properties of Indium Zinc Oxide Thin Films for Flexible Dye-Sensitized Solar Cell

Li, Yuelong; Lee, Do Young; Min, Su Ryun; Cho, Han Na; Kim, Jongsung; Chung, Chee Won

doi:10.1143/jjap.47.6896

Cited by 31 publications

(17 citation statements)

References 11 publications

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“…Amorphous TCOs, such as indium zinc oxide (IZO), are therefore advantageous as they can be deposited at low power, low temperature and without the addition of oxygen, while maintaining excellent electrical and optical properties. Deposited on glass substrates, IZO has already been applied as a front electrode in opaque perovskite [18] and dyesensitized solar cells [19,20].…”

Section: Introductionmentioning

confidence: 99%

Sputtered rear electrode with broadband transparency for perovskite solar cells

Werner

Dubuis

Walter

et al. 2015

Solar Energy Materials and Solar Cells

234

219

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Section: Introductionmentioning

confidence: 99%

Sputtered rear electrode with broadband transparency for perovskite solar cells

Werner

Dubuis

Walter

et al. 2015

Solar Energy Materials and Solar Cells

234

219

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“…7), In (Ref. 8), Al (Ref. 9) for application as transparent conductor in solar cells, 10 organic LEDs, 11 and transparent electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells

Thankalekshmi

Rastogi

2012

Journal of Applied Physics

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Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films J. Appl. Phys. 112, 064111 (2012) Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cellsHighly crystalline c-axis oriented and homogeneous ZnO 1Àx S x films with sulfur composition 0.05 x 0.9 without phase separation were deposited using spray pyrolysis of aqueous precursors. A mechanism of film growth is proposed which envisages a slower kinetics of ZnO precursor decomposition and its specific by-products combined with S-precursor decomposition which enables homogeneous ZnO 1Àx S x phase formation over a wide S-composition range 0.05 x 0.9. This is achieved by controlling the substrate temperature to 300 C and the spray rate at $ 3 ml/min. The ZnO 1Àx S x films primarily form by S 2À substitution at the O 2À lattice sites which is confirmed by detailed analysis of the Zn2p, S2p and O1s x-ray photoelectron spectroscopy peaks. With the increasing of S-content, a structural transformation is observed in ZnO 1Àx S x films; for x < 0.3, the ZnO 1Àx S x films in the oxygen-rich phase are in ZnO wurtzite crystal structure and for x ! 0.44, the ZnO 1Àx S x films lie in the sulfur-rich phase with b-ZnS structure. At threshold x ¼ 0.3, in the structural transition state, diffraction peaks corresponding to both structural phases are observed. The optical transmission spectra at the band gap transition energy position shift to the red side for 0.05 x < 0.52 and towards the blue side with the further increase in S-content in the 0.52 < x 0.9 range. Optical band gap energy determined for ZnO 1Àx S x films show strong band gap bowing over the entire S-composition range, 0.05 x 0.9. The band gap modulation with increased S-content is inconsistent with the use of a single bowing parameter. A bowing parameter of 2.5 eV shows a closer fit for 0.05 x < 0.52. By accounting for additional effect of the strain energy on the band gap due to addition of excess S-content, a closer fit for the observed variation in the band gap is explained in the 0.52 < x 0.9 composition range. Electrical resistivity variation with S-content is consistent with the compensating effect of S 2À substitution at the O 2À sites in ZnO 1Àx S x films. V C 2012 American Institute of Physics.

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“…1,2) They are widely applied in various optoelectronic devices, such as the active channel layer of thin film transistors (TFTs) 3,4) and the electrodes of organic light emitting devices or thin film solar cells. [5][6][7][8] Various technologies have been used to prepare ZnO-based thin films, such as RF/DC magnetic sputtering, 9,10) pulsed laser deposition (PLD), 11) chemical vapor deposition (CVD) 12) and the sol-gel method. 13,14) Among these techniques, the sol-gel method enjoys advantages of simplicity, safety, low cost and easy adjustment of composition.…”

Section: Introductionmentioning

confidence: 99%

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

et al. 2010

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Un-doped ZnO and Sn-doped ZnO (SZO) thin films were synthesized using the sol-gel method. The surface morphology of the SZO films showed a large amount of crystallization. Doping with tin dopants not only reduced the surface roughness of the film, but also repaired defects in the pore structure. Notably, the SZO film with a crystallization temperature of 650 C possessed better crystallization and fewer defects when tin dopants were added. XPS analysis confirmed the presence of O-Sn 4þ phases proving the contribution of tin doping on the electrical conductivity of the SZO films. With regards the PL spectra, luminescence in the Zn 2 SnO 4 phase was observed and affected the red-shifted of broad visible emission. In addition, the 9 at% Sn doped ZnO (S 9 ZO) film showed excellent optical transmittance, however the transmittance improved further when the trace of tin dopants (0.4 at%) and 2 at% In were doped in ZnO matrix (I 2 S 0:4 ZO).

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Effect of Oxygen Concentration on Properties of Indium Zinc Oxide Thin Films for Flexible Dye-Sensitized Solar Cell

Cited by 31 publications

References 11 publications

Sputtered rear electrode with broadband transparency for perovskite solar cells

Sputtered rear electrode with broadband transparency for perovskite solar cells

Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

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