Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Hsu, Chia-Hsun; Geng, Xin-Peng; Wu, Wan-Yu; Zhao, Ming-Jie; Huang, Pao-Hsun; Zhang, Xiaoying; Su, Zhan-Bo; Chen, Zirong; Lien, Shui−Yang

doi:10.1016/j.mssp.2021.105929

Cited by 7 publications

(2 citation statements)

References 60 publications

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“…The annealing process at high temperatures leads to an increase in electrical conductivity as a result of oxygen absorption from the Al:ZnO films. 41…”

Section: Annealing Temperatures and Conductivitymentioning

confidence: 99%

Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Al-Maamori,

Al-Jamal,

Habeeb

et al. 2024

Journal of Chemical Research

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Al: ZnO films are prepared by spraying from the pure ZnO and Al with doping at different weight ratios 0.01, 0.03, 0.05, and 0.09. X-ray diffraction, atomic force microscopy, and energy-dispersive X-ray spectroscopy are used to analyze the structural properties of the films. The results of X-ray diffraction prove that polycrystalline Al:ZnO with a hexagonal wurtzite structure is preferentially oriented on the c-axis, and this is further confirmed by transmission electron microscopy. In addition, 0.09 wt% of Al-doping shows high orientation and homogeneity with the (002) plane, which leads to an increase in the surface roughness properties of the thin films as the root main square by 57.4%. The annealing process at high temperatures increases the conductivity of the Al:ZnO films. The rate of electronic mobility increases slightly with low doping and decreases with increasing doping until it reaches its lowest value (0.1 cm2 (V.s)−1) at a doping ratio of 0.035 wt%. The samples show considerable response for CO at 80 ppm gas concentration with gas responses of 85% and 40% at 90 °C for 0.03 wt% Al:ZnO and ZnO films, respectively. The overall study observed that fabricated sensor Al3+-doped ZnO is reliable and very rapid in detecting carbon monoxide vapors at moderately high temperatures and low gas concentrations.

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“…The annealing process at high temperatures leads to an increase in electrical conductivity as a result of oxygen absorption from the Al:ZnO films. 41…”

Section: Annealing Temperatures and Conductivitymentioning

confidence: 99%

Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Al-Maamori,

Al-Jamal,

Habeeb

et al. 2024

Journal of Chemical Research

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“…high growth rate and vacuumfree reactor [14,15]. It has been explored for many types of oxides [16][17][18][19][20][21][22][23][24], but only a few works report the AP-SALD of SnO 2 . For instance, Hoffmann et al have reported the deposition of SnO 2 thin films using Tetrakis(dimethylamino)tin(IV) (TDMASn) and water [25].…”

Section: Introductionmentioning

confidence: 99%

Impact of air exposure on growth rate and electrical properties of SnO₂ thin films by atmospheric pressure spatial atomic layer deposition

Tran Thi My,

Nguyen,

Mac

et al. 2023

J. Phys. D: Appl. Phys.

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SnO2 thin film is one of the most studied transparent conductive materials that can be deposited using vacuum-free techniques such as atmospheric pressure spatial atomic layer deposition (AP-SALD). This work studies SnO2 thin films prepared from tin(II) acetylacetonate and water vapor, with a particular focus on the impact of air exposure during the AP-SALD process on the growth rate and electrical properties of the films. In-situ resistance measurements and ex-situ Hall effect characterization demonstrated that longer exposure time of the growing film surface to the open air (t air) at 240 °C led to conductivity degradation, while the film thickness decreases. The theoretical calculations show that −OH and O 2 dm (oxygen molecule adsorbed on the five-coordinated Sn atom, also called O2 dimer) are the two most stable surface structures. The formation of O 2 dm is shown as the most thermodynamically favorable oxygen-related species on SnO2(110) surface formed when the film is exposed to the open air, giving rise to both the decrease of film thickness (associated with the desorption of −OH surface groups) and the increase of film resistivity versus t air. The optimized polycrystalline SnO2 sample demonstrated relatively good electrical performance, including an electrical resistivity of 9.3 × 10−3 Ω.cm, carrier density of 9.2 × 1019 cm−3, and Hall mobility of 7.3 cm2 V−1 s−1 at a growth temperature as low as 240 °C. Our findings reveal the critical impact of processing in the open air on the electrical conductivity of the obtained SnO2 films by AP-SALD coating technology.

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The effects of nitrogen ionization during preparation and oxygen pressure during annealing on the morphology, structure, and luminescent properties of Mg-doped ZnO thin films

Luo,

Liu,

Deng

et al. 2024

Appl. Phys. A

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Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Cited by 7 publications

References 60 publications

Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Impact of air exposure on growth rate and electrical properties of SnO₂ thin films by atmospheric pressure spatial atomic layer deposition

The effects of nitrogen ionization during preparation and oxygen pressure during annealing on the morphology, structure, and luminescent properties of Mg-doped ZnO thin films

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Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Cited by 7 publications

References 60 publications

Al3+-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Al3+-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Impact of air exposure on growth rate and electrical properties of SnO2 thin films by atmospheric pressure spatial atomic layer deposition

The effects of nitrogen ionization during preparation and oxygen pressure during annealing on the morphology, structure, and luminescent properties of Mg-doped ZnO thin films

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Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Al³⁺-modified ZnO thin film sensor fabricated by the sputtering method: Characterization and a carbon monoxide gas detection study

Impact of air exposure on growth rate and electrical properties of SnO₂ thin films by atmospheric pressure spatial atomic layer deposition