Effect of overlap region for schottky metal and field oxide on the electrical characteristics of 6500 V/50A 4H-SiC JBS diodes

Niu, Xiping; Sang, Ling; An, Yunlai; Wu, Peifei; Zhang, Wenting; Li, Rui; Du, Zechen; Li, Chenmeng; Wei, Xiaoguang; Yang, Fei

doi:10.1016/j.jcrysgro.2022.127009

Cited by 1 publication

(2 citation statements)

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“…Silicon carbide (SiC) emerges as a promising material for nextgeneration power devices owing to its exceptional physical properties. 1 The imperative condition for mass-producing SiC wafers is the availability of high-quality, rapidly grown SiC crystals. To achieve high-quality bulk SiC crystals, significant efforts have been dedicated to minimizing defects in the crystals.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Solution Components on Solvent Inclusion in SiC Solution Growth

Zhou,

Miura,

Fukami

et al. 2024

Crystal Growth & Design

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In the solution growth method of silicon carbide, cellular structures and solvent inclusions are fatal defects. This study investigates the mechanism of how cosolvent chromium and additive aluminum influence the formation of cellular structures and inclusions via numerical simulations based on a phase field model. The simulation results indicate that introducing chromium into the solution increases the growth rate of the SiC crystals. The uneven distribution of chromium components near the macrostep edge is prone to trigger constitutional supersaturation, ultimately leading to cellular structures and inclusions. Constitutional supersaturation is more pronounced in solutions with a higher viscosity. Additionally, a small amount of additive aluminum increases the interfacial energy, enhancing the step stability by raising the potential barrier for curved steps and moderating step slopes. Experimental results demonstrate that a solution containing 40% chromium can increase the growth rate by three times compared to a pure Si solution. The Si 0.59 -Cr 0.4 -Al 0.01 solution emerges as a promising candidate, maintaining a high growth rate while preserving step stability and effectively suppressing the development of cellular structures and inclusions.

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Section: Introductionmentioning

confidence: 99%

“…Silicon carbide (SiC) emerges as a promising material for next-generation power devices owing to its exceptional physical properties . The imperative condition for mass-producing SiC wafers is the availability of high-quality, rapidly grown SiC crystals.…”

Section: Introductionmentioning

confidence: 99%