“…Since that time, this method has been investigated, analyzed and improved by several groups [12,17,18,19,20]. The VLS method can be implemented with several growth techniques such as vapor phase epitaxy (VPE) [16,17], laser ablation [19], metal-organic vapor phase epitaxy (MOVPE) [18], chemical beam epitaxy (CBE) [12], and molecular beam epitaxy (MBE) [20]. NWs of Si/Ge, III-V or II-VI compounds have been fabricated.…”